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B0520LW

Diodes Incorporated

B0520LW by Diodes Incorporated

B0520LW by Diodes Inc. is a Schottky rectifier diode with max forward voltage of 0.385V and output current of 0.5A, ideal for applications requiring fast switching and low power dissipation in temperature range -65 to 125°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 198,100 parts In-Stock

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J2 Sourcing AB

Sweden . 24,000 parts In-Stock

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24,000

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Vyrian

USA . 709 parts In-Stock

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709

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,580 parts In-Stock

1+ parts

$0.050

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4,580

$0.050

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Semicontronic

India . 666 parts In-Stock

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$2.010

100+ parts

$1.960

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$1.950

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666

$2.010

$1.960

$1.950

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Andel Nordic

Denmark . 5,576 parts In-Stock

1+ parts

$4.764

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$4.573

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$4.573

5,576

$4.764

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$4.573

$4.573

AZTECH Wire

Italy . 709 parts In-Stock

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$5.646

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709

$5.646

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RC Electronics

USA . 100,174 parts In-Stock

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$0.070

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$0.060

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$0.060

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$0.070

$0.060

$0.060

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kepictronics

USA . 10,000 parts In-Stock

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Assy Fe

Spain . 7,789 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Argo Parts USA

USA . 3,095 parts In-Stock

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Continental Prestige Electronics

USA . 2,157 parts In-Stock

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Bastille Electronics

Australia . 550 parts In-Stock

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550

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

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$9.722

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$9.722

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$9.722

500

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$9.722

$9.722

$9.722

Advanced Electronics

New Zealand . 18 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the B0520LW by Diodes Incorporated. Crafted with precision and excellence, this Schottky rectifier diode offers unparalleled performance and reliability in a compact, easy-to-install package. Whether you're designing automotive electronics, consumer appliances, or industrial equipment, this diode will elevate your projects to new heights. Say goodbye to subpar components and hello to a world of limitless possibilities with the B0520LW. Upgrade your systems today and experience the quality and value that only Diodes Incorporated can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Config: SINGLE

Simplifies installation and usage of the diode.

Surface Mount: YES

Allows for easy mounting onto circuit boards, saving space and simplifying assembly.

Maximum Operating Temperature: 125 °C

Ensures stable performance even under high temperature conditions.

Maximum Power Dissipation: 0.41 W

Can handle a relatively high power dissipation, making it suitable for a variety of applications.

Diode Type: RECTIFIER DIODE

Specifically designed for rectification, providing efficient conversion of AC to DC.

Technology: SCHOTTKY

Offers low forward voltage drop and fast switching, enhancing efficiency.

Maximum Repetitive Peak Reverse Voltage: 20 V

Can handle high reverse voltages, ensuring reliable performance in various circuits.

Maximum Non Repetitive Peak Forward Current: 5.5 A

Capable of handling high current spikes, making it suitable for robust applications.

Technical Specifications

Diodes & Rectifiers B0520LW attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.385 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Maximum Non Repetitive Peak Forward Current:

5.5 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.5 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.41 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

B0520LW Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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