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AS431IANTR-G1

Diodes Incorporated

AS431IANTR-G1 by Diodes Incorporated

AS431IANTR-G1 by Diodes Inc. is a voltage reference IC with adjustable output (2.487-2.512V) in a small outline package suitable for automotive applications. It operates b/w -40 to 125°C, has a max output current of 0.1A, and features a temp coef of 38.78 ppm/°C for precise voltage regulation in compact designs.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,803 parts In-Stock

1+ parts

$0.180

100+ parts

$0.091

1k+ parts

$0.075

10k+ parts

$0.067

2,803

$0.180

$0.091

$0.075

$0.067

Verical

USA . 1,155,000 parts In-Stock

1+ parts

-

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$0.057

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$0.057

Arrow

USA . 6,000 parts In-Stock

1+ parts

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$0.072

6,000

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$0.072

Distributors (In-Stock)

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NAC Semi

USA . 126,000 parts In-Stock

1+ parts

-

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$0.085

126,000

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$0.085

IBS Electronics

USA . 69,000 parts In-Stock

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$0.073

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$0.073

VNN

France . 3,889 parts In-Stock

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3,889

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Nova Conductors

Japan . 75 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 34 parts In-Stock

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$1.855

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34

$1.855

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Modulus Dynamics

Lithuania . 5,480 parts In-Stock

1+ parts

$19.637

100+ parts

$19.637

1k+ parts

$19.637

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-

5,480

$19.637

$19.637

$19.637

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Metaverse IC Inc.

Canada . 252,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 26,085 parts In-Stock

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Perfect Parts

USA . 10,080 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,423 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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GreenTree Electronics

Israel . 6,000 parts In-Stock

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Continental Prestige Electronics

USA . 3,809 parts In-Stock

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Authorized Procurement Solutions

USA . 1,000 parts In-Stock

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Argo Parts USA

USA . 556 parts In-Stock

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556

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Enhance the precision and reliability of your voltage references with the AS431IANTR-G1 from Diodes Incorporated. This sleek, compact device offers a trim or adjustable output, making it perfect for a wide range of applications. With a temperature grade suitable for automotive use and a maximum operating temperature of 125°C, this voltage reference ensures consistent performance in demanding environments. Trust in the expertise and quality of Diodes Incorporated to deliver exceptional value to your projects with the AS431IANTR-G1.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection for the voltage reference components within the package, ensuring durability and reliability.

Surface Mount: YES

Being surface mount allows for easy and efficient assembly onto circuit boards, saving time and effort during manufacturing.

Trim or Adjustable Output (V): YES

Having adjustable output voltage allows for flexibility in design and customization to meet specific application requirements.

Maximum Output Current: 0.1 A

Capable of providing a continuous output current of up to 0.1A, making it suitable for a wide range of applications.

Technology: BIPOLAR

Utilizing bipolar technology ensures high precision and stability in voltage output, critical for applications requiring accurate voltage references.

Temperature Grade: AUTOMOTIVE

Designed to meet automotive industry standards for temperature and reliability, making it suitable for automotive applications where ruggedness is required.

Technical Specifications

Voltage References AS431IANTR-G1 attributes and parameters. Explore more Voltage References devices from Diodes Incorporated

Specs

Additional Features:

PROGRAMMABLE PRECISE OUTPUT VOLTAGE FROM 2.5 TO 36V

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Length:

2.9 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.1 A

Maximum Output Voltage:

2.512 V

Minimum Output Voltage:

2.487 V

Nominal Output Voltage:

2.5 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Voltage References

Surface Mount:

YES

Technology:

BIPOLAR

Max Voltage Temp Coef:

38.78 ppm/Cel

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

YES

Width (mm):

1.3 mm

Trade Compliance

AS431IANTR-G1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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