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APX358M8G-13

Diodes Incorporated

APX358M8G-13 by Diodes Incorporated

APX358M8G-13 by Diodes Inc. is an Operational Amplifier with 7000uV Max Input Offset Voltage, 63dB Nominal CMRR, and 10000 Min Voltage Gain. It's used in industrial applications due to its -40 to 85 °C operating temp range, Vsup of 2.7/5V, and low power consumption at 0.6mA max supply current.

Median Price

$1.530

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 286 parts In-Stock

1+ parts

$1.530

100+ parts

$0.595

1k+ parts

$0.406

10k+ parts

$0.275

286

$1.530

$0.595

$0.406

$0.275

Avnet

USA . 2,500 parts In-Stock

1+ parts

-

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2,500

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NAC Semi

USA . 2,500 parts In-Stock

1+ parts

-

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2,500

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 1,668 parts In-Stock

1+ parts

$2.078

100+ parts

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1,668

$2.078

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Northwest PG Solutions

USA . 849 parts In-Stock

1+ parts

$3.376

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849

$3.376

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Kepictronics

USA . 1,746 parts In-Stock

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1,746

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Native Components

USA . 792 parts In-Stock

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$2.977

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792

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$2.977

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Overview

Enhance your electronic designs with the APX358M8G-13 from Diodes Incorporated. This operational amplifier offers superior quality and reliability, making it ideal for a wide range of applications. With its micropower technology and low bias current, this op amp provides high performance while consuming minimal power. The compact package design and surface mount capability further add to its versatility. Trust Diodes Incorporated to deliver innovative solutions that exceed your expectations. Elevate your projects with the APX358M8G-13 and experience unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the op amp, ensuring long-term reliability.

Maximum Input Offset Voltage: 7000 uV

Low input offset voltage helps in minimizing errors in signal processing, making this op amp suitable for precision applications.

Maximum Average Bias Current (IIB): 0.5 uA

Low bias current helps in reducing power consumption and improves the overall efficiency of the circuit.

No. of Functions: 2

Having multiple functions in a single package makes it space-efficient and cost-effective for applications requiring multiple amplification circuits.

Nominal Supply Voltage / Vsup (V): 2.7

Operates at a low supply voltage, making it suitable for low-power applications and extending battery life.

Minimum Voltage Gain: 10000

High voltage gain allows for amplification of weak signals with minimal distortion, making this op amp suitable for sensor signal conditioning.

Nominal Unity Gain Bandwidth: 1000 kHz

High unity gain bandwidth ensures that the op amp can handle high-frequency signals accurately, making it suitable for audio and RF applications.

Technical Specifications

Operational Amplifiers (Op Amps) APX358M8G-13 attributes and parameters. Explore more Operational Amplifiers (Op Amps) devices from Diodes Incorporated

Amplifier Characteristics

Amplifier Type:

Architecture:

Voltage Feedback

Technology:

CMOS

Power Supply:

2.7/5 V

Total Functions:

2

Sub-Category:

Operational Amplifiers

Powered:

No

Frequency Compensation:

Yes

Low-Bias:

No

Low-Offset:

No

Micropower:

Yes

Wideband:

No

Programmable Power:

No

Performance Specifications

Nominal Unity Gain Bandwidth:

1 MHz

Nominal Common Mode Rejection Ratio (CMRR ):

63 dB

Input Offset Voltage Limit:

7000 uV

Minimum Voltage Gain:

10000

Nominal Slew Rate:

1 V/us

Peak Bias Current:

500 nA

Maximum Bias Current (IIB) @25 °C:

250 nA

Operational Characteristics

Nominal Supply Voltage:

2.7 V

Maximum Supply Voltage:

5.5 V

Lowest Operating Temperature:

-40 °C (-40 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Peak Reflow Temperature:

260 °C (500 °F)

Reflow Peak Time Limit:

30 s

Maximum Supply Current:

600 μA

Physical Characteristics

Length:

0.118 in (3 mm)

Width:

0.118 in (3 mm)

Maximum Seated Height:

0.043 in (1.1 mm)

Total Terminals:

8

Terminal Pitch:

0.026 in (0.65 mm)

Terminal Position:

Dual

Terminal Form:

Terminal Finish:

Matte Tin

Package Body Material:

Plastic/Epoxy

Surface Mount:

Yes

Manufacturing and Reliability

Moisture Sensitivity Level (MSL):

3

Temperature Grade:

Qualified:

No

Standards

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Packaging and Shipping

Packing Method:

Tape And Reel

Package Code:

Package Shape:

Package Style:

Small Outline, Thin Profile, Shrink Pitch

Package Equivalence Code:

TSSOP8,.19

Trade Compliance

APX358M8G-13 Amplifiers trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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