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AP431SHBNTR-G1

Diodes Incorporated

AP431SHBNTR-G1 by Diodes Incorporated

Diodes Inc.'s AP431SHBNTR-G1 is a voltage reference IC with adjustable output (2.47-2.52V) in a small outline package for automotive applications. Operating from -40 to 125°C, it has a low temp coefficient of 43.724 ppm/°C and is surface mountable with dual terminals.

Median Price

$0.220

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,022 parts In-Stock

1+ parts

$0.220

100+ parts

$0.111

1k+ parts

$0.092

10k+ parts

$0.085

3,022

$0.220

$0.111

$0.092

$0.085

DigiKey

USA . 2,852 parts In-Stock

1+ parts

$0.220

100+ parts

$0.110

1k+ parts

$0.091

10k+ parts

$0.082

2,852

$0.220

$0.110

$0.091

$0.082

Verical

USA . 783,000 parts In-Stock

1+ parts

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$0.072

783,000

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$0.072

Avnet

USA . 3,000 parts In-Stock

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3,000

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Vyrian

USA . 236,265 parts In-Stock

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236,265

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VNN

France . 4,800 parts In-Stock

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4,800

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NAC Semi

USA . 3,000 parts In-Stock

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Speed Components Ltd

Israel . 200 parts In-Stock

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200

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Distributors (Availability)

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Ampacity Inc.

Singapore . 236,573 parts In-Stock

1+ parts

$0.061

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236,573

$0.061

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Corohmni

South Africa . 150 parts In-Stock

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$12.871

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$12.871

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Aztec Data Supply Inc.

USA . 1,273 parts In-Stock

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$22.300

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1,273

$22.300

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Eastek

USA . 3,000 parts In-Stock

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$0.090

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3,000

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$0.090

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Argo Parts USA

USA . 2,376 parts In-Stock

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Continental Prestige Electronics

USA . 1,952 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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iodParts Technologies Inc.

India . 50 parts In-Stock

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Overview

Enhance your circuit design with the AP431SHBNTR-G1 from Diodes Incorporated, a leading manufacturer known for high-quality components. This voltage reference is perfect for automotive applications, offering precise and stable output voltage for optimal performance. With its small outline and adjustable output feature, this product provides flexibility and reliability in a compact package. Trust Diodes Incorporated to deliver value and innovation with the AP431SHBNTR-G1, making your projects stand out with superior quality and efficiency.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the voltage reference, making it suitable for various environmental conditions.

Surface Mount: YES

Allows for easy and convenient installation on a circuit board, saving space and facilitating automated assembly processes.

Trim or Adjustable Output (V): YES

Provides flexibility in adjusting the output voltage to suit specific application requirements.

No. of Terminals: 3

Offers multiple connection points for secure and stable electrical connections.

Maximum Operating Temperature: 125 °C

Can operate reliably in high temperature environments, making it suitable for industrial and automotive applications.

Minimum Output Voltage: 2.47 V

Provides a stable and precise output voltage, ensuring accurate voltage references.

Terminal Finish: MATTE TIN

Ensures good conductivity and corrosion resistance for reliable electrical connections.

Width (mm): 1.3 mm

Compact size allows for space-saving designs and integration in tight spaces.

Max Voltage Temp Coef: 43.724 ppm/°C

Low temperature coefficient ensures minimal output voltage variation with temperature changes, maintaining accuracy.

Nominal Output Voltage: 2.495 V

Provides a stable and reliable reference voltage for precision measurement and control applications.

Technical Specifications

Voltage References AP431SHBNTR-G1 attributes and parameters. Explore more Voltage References devices from Diodes Incorporated

Specs

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Length:

2.9 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

2.52 V

Minimum Output Voltage:

2.47 V

Nominal Output Voltage:

2.495 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.7 mm

Surface Mount:

YES

Max Voltage Temp Coef:

43.724 ppm/Cel

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Pitch:

.96 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

YES

Width (mm):

1.3 mm

Trade Compliance

AP431SHBNTR-G1 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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