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AP1212HSG-13

Diodes Incorporated

AP1212HSG-13 by Diodes Incorporated

AP1212HSG-13 by Diodes Inc. is a MOSFET gate driver with a supply voltage range of 2.7V to 5.5V and a max operating temperature of 125°C. It has two functions, a small outline package style, and is suitable for automotive applications.

Median Price

$0.714

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.714

100+ parts

-

1k+ parts

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100

$0.714

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Vyrian

USA . 11,589 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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11,589

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VNN

France . 639 parts In-Stock

1+ parts

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639

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Continental Prestige Electronics

USA . 5,154 parts In-Stock

1+ parts

$0.714

100+ parts

-

1k+ parts

-

10k+ parts

$0.700

5,154

$0.714

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-

$0.700

Argo Parts USA

USA . 1,280 parts In-Stock

1+ parts

$0.714

100+ parts

-

1k+ parts

-

10k+ parts

$0.693

1,280

$0.714

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-

$0.693

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.714

100+ parts

-

1k+ parts

$0.678

10k+ parts

$0.664

100

$0.714

-

$0.678

$0.664

Andel Nordic

Denmark . 3,953 parts In-Stock

1+ parts

$3.481

100+ parts

-

1k+ parts

$3.342

10k+ parts

$3.342

3,953

$3.481

-

$3.342

$3.342

Aztec Data Supply Inc.

USA . 3,823 parts In-Stock

1+ parts

$9.577

100+ parts

-

1k+ parts

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3,823

$9.577

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Corohmni

South Africa . 775 parts In-Stock

1+ parts

$11.232

100+ parts

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775

$11.232

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AZTECH Wire

Italy . 613 parts In-Stock

1+ parts

$14.668

100+ parts

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613

$14.668

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Ampacity Inc.

Singapore . 701 parts In-Stock

1+ parts

$39.500

100+ parts

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701

$39.500

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Microchip USA

USA . 183 parts In-Stock

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183

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Overview

Experience superior performance and reliability with the AP1212HSG-13 by Diodes Incorporated. As a leading manufacturer in MOSFET Gate Drivers, Diodes Incorporated delivers excellence in every product. This high-quality driver offers two functions in a compact, rectangular package, making it ideal for a wide range of applications. With a maximum supply voltage of 5.5V and a minimum supply voltage of 2.7V, this driver provides unparalleled versatility. Its small outline package style and dual terminal position ensure easy integration into any design. Trust Diodes Incorporated to deliver outstanding value, benefits, and advantages with the AP1212HSG-13.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body ensures good durability and reliability for the product.

Surface Mount: YES

Being surface mountable makes it easier to integrate this MOSFET gate driver into compact electronic designs.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this MOSFET gate driver can handle a wide range of power requirements in various applications.

No. of Functions: 2

Having 2 functions in one device simplifies circuit design and reduces the need for additional components.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement on a PCB and efficient use of board space.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the gate driver to other components in the circuit.

Package Style: SMALL OUTLINE

The small outline package style saves space on the PCB, ideal for applications where board real estate is limited.

Minimum Supply Voltage: 2.7 V

The low minimum supply voltage of 2.7V allows for operation in low-power scenarios without compromising performance.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures reliable operation even in harsh environments or under heavy loads.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows for use in cold environments without impacting functionality.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

The dual terminal position allows for convenient and flexible PCB layout options during assembly.

Maximum Seated Height: 1.75 mm

The low maximum seated height of 1.75mm helps in maintaining a slim profile for the overall electronic system.

Width: 3.9 mm

The narrow width of 3.9mm makes this gate driver suitable for compact circuit designs and space-constrained applications.

High Side Driver: YES

Having a high side driver capability simplifies the design of circuits involving high-side switching applications.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260 °C, this gate driver can withstand high-temperature soldering processes during assembly.

Length: 5.05 mm

The compact length of 5.05mm ensures that the gate driver can be easily accommodated in tight PCB layouts.

Temperature Grade: AUTOMOTIVE

Being rated for automotive temperature grades ensures that this MOSFET gate driver is suitable for automotive applications with demanding temperature requirements.

Terminal Form: GULL WING

The gull-wing terminal form facilitates easy soldering onto the PCB surface, enhancing the overall manufacturing process.

Nominal Supply Voltage: 5 V

The 5V nominal supply voltage makes this gate driver compatible with standard power sources, simplifying the integration process.

Terminal Pitch: 1.27 mm

The 1.27mm terminal pitch allows for easy connection and routing of wires or traces on the PCB, enabling efficient signal transmission.

Moisture Sensitivity Level (MSL): 3

With a moisture sensitivity level of 3, this gate driver is suitable for handling standard moisture exposure during storage or operation.

Nominal Output Peak Current Limit: 1 A

The 1A nominal output peak current limit ensures safe operation and protects the driver and connected components from overcurrent conditions.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

The Buffer or Inverter based MOSFET driver interface IC type offers flexibility in adapting the gate driver to various circuit configurations and performance requirements.

Turn-off Time: 10 us

With a turn-off time of 10us, this gate driver provides efficient switching speed for MOSFETs, enhancing overall system performance and response time.

Technical Specifications

MOSFET Gate Drivers AP1212HSG-13 attributes and parameters. Explore more MOSFET Gate Drivers devices from Diodes Incorporated

Specs

High Side Driver:

YES

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

5.05 mm

Moisture Sensitivity Level (MSL):

3

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

1 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

2.7 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Turn-off Time:

10 us

Width:

3.9 mm

Trade Compliance

AP1212HSG-13 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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