Loading...

5KP75A-B

Diodes Incorporated

5KP75A-B by Diodes Incorporated

5KP75A-B by Diodes Inc. is a unidirectional Trans Voltage Suppressor diode with 5000W peak power dissipation and 10uA reverse current. It operates b/w -55°C to 175°C, has a breakdown voltage of 83.3V, and clamps at a max of 121V. Ideal for transient suppression in various electronic applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 20 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20

-

-

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

VNN

France . 5,960 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,960

-

-

-

-

Nova Conductors

Japan . 51 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

51

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 605 parts In-Stock

1+ parts

$0.132

100+ parts

-

1k+ parts

-

10k+ parts

-

605

$0.132

-

-

-

Component Stockers USA

USA . 46 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

-

46

$1.010

-

-

-

Ampacity Inc.

Singapore . 40 parts In-Stock

1+ parts

$1.010

100+ parts

-

1k+ parts

-

10k+ parts

-

40

$1.010

-

-

-

Argo Parts USA

USA . 7,919 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,919

-

-

-

-

Continental Prestige Electronics

USA . 4,964 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,964

-

-

-

-

Netroflash

USA . 3,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,050

-

-

-

-

Overview

Experience superior quality and reliability with the 5KP75A-B diode from Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch performance and durability in their products. This Transient Suppression Device is essential for protecting your electronics from voltage spikes, ensuring smooth operation and longevity. Trust in the value and benefits that this product offers, providing peace of mind and security for your valuable equipment. Upgrade to the 5KP75A-B today and safeguard your investments with confidence.

Feature Benefit Bullets

Package Body Material: GLASS

Glass is a durable and heat-resistant material, ensuring the device can withstand high temperatures and harsh operating environments.

Maximum Non Repetitive Peak Reverse Power Dissipation: 5000 W

High power dissipation capability allows the device to handle surges and transient events effectively, protecting connected components.

Maximum Reverse Current: 10 uA

Low reverse current ensures minimal leakage and energy wastage during normal operation, improving efficiency.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the device to work reliably in various environmental conditions.

Minimum Breakdown Voltage: 83.3 V

High breakdown voltage ensures effective suppression of voltage spikes, safeguarding sensitive electronics.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Specifically designed diode type for transient voltage suppression, providing effective protection against voltage surges and spikes.

Technology: AVALANCHE

Avalanche technology allows for rapid response and high surge handling capability, ensuring quick protection when transient events occur.

Technical Specifications

Transient Suppression Devices 5KP75A-B attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

83.3 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

121 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-LALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

5000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Reverse Current:

10 uA

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

5KP75A-B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20