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5KP33A-B

Diodes Incorporated

5KP33A-B by Diodes Incorporated

Diodes Incorporated 5KP33A-B is a unidirectional Trans Voltage Suppressor Diode with 5000W power dissipation, 10uA reverse current, and 53.3V clamping voltage. Ideal for transient suppression in applications requiring high breakdown voltage and low reverse leakage current.

Median Price

$1.720

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 575 parts In-Stock

1+ parts

$1.720

100+ parts

$1.021

1k+ parts

$0.903

10k+ parts

$0.806

575

$1.720

$1.021

$0.903

$0.806

Arrow

USA . 800 parts In-Stock

1+ parts

-

100+ parts

$1.556

1k+ parts

$1.375

10k+ parts

$1.256

800

-

$1.556

$1.375

$1.256

Verical

USA . 41 parts In-Stock

1+ parts

-

100+ parts

$1.970

1k+ parts

-

10k+ parts

-

41

-

$1.970

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 168 parts In-Stock

1+ parts

$1.756

100+ parts

-

1k+ parts

-

10k+ parts

-

168

$1.756

-

-

-

TME

Poland . 4 parts In-Stock

1+ parts

$2.210

100+ parts

$1.500

1k+ parts

-

10k+ parts

-

4

$2.210

$1.500

-

-

VNN

France . 4,225 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,225

-

-

-

-

Vyrian

USA . 126 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

126

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 530 parts In-Stock

1+ parts

$1.550

100+ parts

-

1k+ parts

-

10k+ parts

-

530

$1.550

-

-

-

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$1.933

100+ parts

-

1k+ parts

$1.855

10k+ parts

-

1,000

$1.933

-

$1.855

-

Continental Prestige Electronics

USA . 12,475 parts In-Stock

1+ parts

$1.972

100+ parts

-

1k+ parts

-

10k+ parts

$1.933

12,475

$1.972

-

-

$1.933

Argo Parts USA

USA . 3,991 parts In-Stock

1+ parts

$1.972

100+ parts

-

1k+ parts

-

10k+ parts

-

3,991

$1.972

-

-

-

Netroflash

USA . 100 parts In-Stock

1+ parts

$1.972

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$1.972

-

-

-

AZTECH Wire

Italy . 1,500 parts In-Stock

1+ parts

$6.040

100+ parts

-

1k+ parts

-

10k+ parts

-

1,500

$6.040

-

-

-

Overview

Enhance your electronic systems with the 5KP33A-B transient suppression device from Diodes Incorporated. This high-quality product offers reliable protection against voltage spikes, ensuring the longevity of your equipment. With a maximum clamping voltage of 53.3V and a maximum operating temperature of 175°C, this diode is perfect for a wide range of applications. Trust in Diodes Incorporated's reputation for excellence and invest in the 5KP33A-B for peace of mind and superior performance.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material offers high durability and heat resistance, making the device suitable for various environments and applications.

Maximum Non Repetitive Peak Reverse Power Dissipation: 5000 W

High power dissipation capability ensures protection against large transient surges without compromising the device's performance.

Maximum Reverse Current: 10 uA

Low reverse current ensures minimal power loss during normal operation, increasing overall efficiency.

Maximum Operating Temperature: 175 °C

Wide operating temperature range allows the device to function effectively even in harsh environmental conditions.

Minimum Breakdown Voltage: 36.7 V

Low breakdown voltage ensures quick response and effective suppression of transient surges, protecting connected equipment.

Technical Specifications

Transient Suppression Devices 5KP33A-B attributes and parameters. Explore more Transient Suppression Devices devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

36.7 V

Case Connection:

ISOLATED

Maximum Clamping Voltage:

53.3 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

O-LALF-W2

Maximum Non Repetitive Peak Reverse Power Dissipation:

5000 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Reverse Current:

10 uA

Surface Mount:

NO

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

5KP33A-B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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