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1N4148WS-7

Diodes Incorporated

1N4148WS-7 by Diodes Incorporated

1N4148WS-7 by Diodes Inc. is a single rectifier diode with a reverse test voltage of 75V and max forward voltage of 0.715V. It operates b/w -65 to 150°C, suitable for applications requiring fast switching speeds and low power dissipation in small outline packages.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

36

In-Stock Inventory

1k+

Distributors (In-Stock)

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Voyager Components

USA . 2,000 parts In-Stock

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$0.024

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$0.024

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DF Sales Co.

USA . 1,110 parts In-Stock

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DF Sales Co.

USA . 1,110 parts In-Stock

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Freelance Electronics

USA . 1,994 parts In-Stock

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Component Electronics Inc.

Canada . 41 parts In-Stock

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PC Components Company LLC

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LWI Electronics Inc

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EMSNET

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Vyrian

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Dan-Mar Components

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Prism Electronics

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Connector Distribution Corp

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Right Parts Inc.

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Bristol Electronics

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Mil-Aero Solutions, Inc.

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Lakeland Logistics Inc

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VNN

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Sea View Technologies

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Atlantic Semiconductor

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Inland Empire Components Inc.

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Elcom Components

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Netsource Technology, Inc.

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ACDS - Activité Composants Distribution Service

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NexGen Digital

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NPI Materials, Inc.

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First Choice Components Inc.

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Nova Conductors

Japan . 300 parts In-Stock

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M&R Communications

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Flex Direct, LLC

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Electronic Expediters

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Ampacity Inc.

Singapore . 803 parts In-Stock

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$0.010

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Corohmni

South Africa . 700 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,271 parts In-Stock

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Semicontronic

India . 1,061 parts In-Stock

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AZTECH Wire

Italy . 191 parts In-Stock

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Metaverse IC Inc.

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Authorized Procurement Solutions

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Lixinc

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Continental Prestige Electronics

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Advanced Electronics

New Zealand . 450 parts In-Stock

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Argo Parts USA

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Bastille Electronics

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Overview

Looking for a reliable diode solution? Look no further than the 1N4148WS-7 by Diodes Incorporated. Known for their high-quality products, Diodes Incorporated offers a range of diodes and rectifiers designed to meet your needs. Whether you're working on electronics, power supplies, or signal processing applications, this diode is sure to deliver exceptional performance. With a fast reverse recovery time, low reverse current, and a small outline package style, this diode provides excellent value and reliability for all your projects. Upgrade to the 1N4148WS-7 and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the diode, making it suitable for a wide range of applications.

Maximum Reverse Recovery Time: 0.004 us

The low reverse recovery time ensures efficient operation of the diode, making it ideal for high-speed applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand thermal stress and operate reliably in challenging environments.

Diode Type: RECTIFIER DIODE

As a rectifier diode, this product is specifically designed for converting AC to DC, making it a perfect choice for rectification applications.

Maximum Forward Voltage (VF): 0.715 V

The low forward voltage drop of 0.715 V ensures minimal power loss and efficient performance of the diode.

Technical Specifications

Diodes & Rectifiers 1N4148WS-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Minimum Breakdown Voltage:

75 V

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.715 V

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

2 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.15 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

75 V

Maximum Reverse Current:

1 uA

Maximum Reverse Recovery Time:

.004 us

Reverse Test Voltage:

75 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

1N4148WS-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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