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MBR300200CTR

Daco Semiconductor

MBR300200CTR by Daco Semiconductor

MBR300200CTR by Daco Semiconductor is a Schottky rectifier diode with 2 elements, offering a max forward voltage of 0.92V and output current of 150A. With a max reverse voltage of 200V, it is commonly used in applications requiring high power efficiency and fast switching capabilities.

Median Price

$76.330

Lifecycle Status

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DigiKey

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Nova Conductors

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$80.680

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61

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Vyrian

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Aztec Data Supply Inc.

USA . 324 parts In-Stock

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$0.120

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324

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AZTECH Wire

Italy . 283 parts In-Stock

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$12.145

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Continental Prestige Electronics

USA . 6,276 parts In-Stock

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$79.066

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Argo Parts USA

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Overview

Experience the superior quality and precision engineering of Daco Semiconductor with the MBR300200CTR diode rectifier. This common anode, two-element diode offers unparalleled performance and reliability in a compact rectangular package. Ideal for a wide range of applications, this Schottky technology diode boasts a maximum output current of 150A and a maximum repetitive peak reverse voltage of 200V. Trust Daco Semiconductor to deliver unmatched value and efficiency with the MBR300200CTR diode rectifier.

Feature Benefit Bullets

Config: COMMON ANODE, 2 ELEMENTS

Having a common anode with 2 elements allows for efficient circuit design and connectivity.

Maximum Reverse Current: 3000 uA

The low maximum reverse current ensures better performance and reliability during reverse bias conditions.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to mount and integrate into various electronic designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this diode can withstand harsh environmental conditions.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, it is specifically designed for converting alternating current to direct current efficiently.

Maximum Forward Voltage (VF): 0.92 V

Having a low maximum forward voltage minimizes power loss and improves overall efficiency.

Maximum Output Current: 150 A

With a high maximum output current, this diode can handle heavy loads and high power applications.

Technology: SCHOTTKY

The Schottky technology ensures fast switching speeds and lower voltage drops, making it ideal for high frequency applications.

Maximum Repetitive Peak Reverse Voltage: 200 V

The high maximum repetitive peak reverse voltage provides a wide operating range and protection against voltage spikes.

Diode Element Material: SILICON

Silicon is a reliable and commonly used material for diodes, offering good performance and durability.

Technical Specifications

Diodes & Rectifiers MBR300200CTR attributes and parameters. Explore more Diodes & Rectifiers devices from Daco Semiconductor

Specs

Application:

GENERAL PURPOSE

Case Connection:

ANODE

Config:

COMMON ANODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.92 V

JESD-30 Code:

R-XUFM-X2

Maximum Non Repetitive Peak Forward Current:

2000 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

150 A

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

3000 uA

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MBR300200CTR Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Daco Semiconductor

DACO, established in 1994 , is the pioneer and innovative manufacturer of wafer and module device assembly in Taiwan dedicated in the designing, manufacturing of superior Semiconductor products covering discrete parts and modules of IGBT , SiC (Silicon Carbide) Diode , SiC (Silicon Carbide) MOSFET, Silicon Diode, Schottky, MOSFET and Thyristor. Cutting Edge Technology and Performance: The founder of DACO, who comes from the Semiconductor Research Center of National Science Council in Taiwan, is experienced in the fabrication of Metal Gat IC, Poly Gat IC, Power MOS, and Sipos GPP wafer. With the excellent technology, he has been leading DACO in an outstanding position in the trend of advanced technology in power electronic semiconductors. For the past years, DACO had been maintaining collaborative relationship with the companies serving military applications in researching and manufacturing high power rectifier modules on military specifications. In the recent years, our R&D team has been developing cutting edge technology to obtain various patents, and implementing vertical technology to upgrade the service to customers.

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