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KBJ1006G

Daco Semiconductor

KBJ1006G by Daco Semiconductor

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

Median Price

$0.900

Lifecycle Status

Suppliers In-Stock

1

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 1,847 parts In-Stock

1+ parts

$0.900

100+ parts

$0.363

1k+ parts

$0.252

10k+ parts

$0.188

1,847

$0.900

$0.363

$0.252

$0.188

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Authorized Procurement Solutions

USA . 90,000 parts In-Stock

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90,000

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Metaverse IC Inc.

Canada . 60,000 parts In-Stock

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60,000

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Perfect Parts

USA . 9,520 parts In-Stock

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9,520

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Kepictronics

USA . 4,270 parts In-Stock

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4,270

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Glotronic Ltd.

UK . 2,005 parts In-Stock

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2,005

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Technical Specifications

Bridge Rectifier Diodes KBJ1006G attributes and parameters. Explore more Bridge Rectifier Diodes devices from Daco Semiconductor

Specs

Minimum Breakdown Voltage:

600 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.05 V

JESD-30 Code:

R-PSFM-T4

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

FLANGE MOUNT

Maximum Repetitive Peak Reverse Voltage:

600 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

600 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

KBJ1006G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Daco Semiconductor

DACO, established in 1994 , is the pioneer and innovative manufacturer of wafer and module device assembly in Taiwan dedicated in the designing, manufacturing of superior Semiconductor products covering discrete parts and modules of IGBT , SiC (Silicon Carbide) Diode , SiC (Silicon Carbide) MOSFET, Silicon Diode, Schottky, MOSFET and Thyristor. Cutting Edge Technology and Performance: The founder of DACO, who comes from the Semiconductor Research Center of National Science Council in Taiwan, is experienced in the fabrication of Metal Gat IC, Poly Gat IC, Power MOS, and Sipos GPP wafer. With the excellent technology, he has been leading DACO in an outstanding position in the trend of advanced technology in power electronic semiconductors. For the past years, DACO had been maintaining collaborative relationship with the companies serving military applications in researching and manufacturing high power rectifier modules on military specifications. In the recent years, our R&D team has been developing cutting edge technology to obtain various patents, and implementing vertical technology to upgrade the service to customers.

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