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GBL02

Daco Semiconductor

GBL02 by Daco Semiconductor

BRIDGE RECTIFIER DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 4; Surface Mount: NO; Package Shape: RECTANGULAR;

Median Price

$4.700

Lifecycle Status

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11

In-Stock Inventory

1k+

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Mouser Electronics

USA . 1,963 parts In-Stock

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$4.700

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$3.300

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$2.560

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Vyrian

USA . 24,163 parts In-Stock

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Rebound Electronics

UK . 346 parts In-Stock

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Semtec, LLC

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Halfin

Belgium . 160 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 75 parts In-Stock

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Extreme Components

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Sunrise Surplus Inc.

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J & M Industries LLC

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Elcom Components

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American Microsemiconductor Inc.

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CPlus Electronics

USA . 18,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 13,786 parts In-Stock

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Authorized Procurement Solutions

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Assy Fe

Spain . 37 parts In-Stock

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Technical Specifications

Bridge Rectifier Diodes GBL02 attributes and parameters. Explore more Bridge Rectifier Diodes devices from Daco Semiconductor

Specs

Minimum Breakdown Voltage:

200 V

Case Connection:

ISOLATED

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PSIP-T4

Maximum Non Repetitive Peak Forward Current:

150 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Output Current:

4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Reference Standard:

UL RECOGNIZED

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Current:

5 uA

Reverse Test Voltage:

200 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

GBL02 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Daco Semiconductor

DACO, established in 1994 , is the pioneer and innovative manufacturer of wafer and module device assembly in Taiwan dedicated in the designing, manufacturing of superior Semiconductor products covering discrete parts and modules of IGBT , SiC (Silicon Carbide) Diode , SiC (Silicon Carbide) MOSFET, Silicon Diode, Schottky, MOSFET and Thyristor. Cutting Edge Technology and Performance: The founder of DACO, who comes from the Semiconductor Research Center of National Science Council in Taiwan, is experienced in the fabrication of Metal Gat IC, Poly Gat IC, Power MOS, and Sipos GPP wafer. With the excellent technology, he has been leading DACO in an outstanding position in the trend of advanced technology in power electronic semiconductors. For the past years, DACO had been maintaining collaborative relationship with the companies serving military applications in researching and manufacturing high power rectifier modules on military specifications. In the recent years, our R&D team has been developing cutting edge technology to obtain various patents, and implementing vertical technology to upgrade the service to customers.

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