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2W04M

Daco Semiconductor

2W04M by Daco Semiconductor

BRIDGE RECTIFIER DIODE; Terminal Position: BOTTOM; Terminal Form: WIRE; No. of Terminals: 4; Surface Mount: NO; Package Shape: ROUND;

Median Price

$0.082

Lifecycle Status

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8

In-Stock Inventory

1k+

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Adafruit Industries

USA . 600 parts In-Stock

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$0.079

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$0.072

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$0.065

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$0.079

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Master Electronics

USA . 270 parts In-Stock

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$0.085

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$0.076

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$0.073

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$0.073

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Electro Sonic

Canada . 770 parts In-Stock

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$0.100

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$0.091

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$0.091

PUI

USA . 142 parts In-Stock

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Tech-Mark Corp

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GES GmbH

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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American Microsemiconductor Inc.

USA . 1 parts In-Stock

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Native Components

USA . 361 parts In-Stock

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$0.041

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$0.039

361

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$0.039

Advanced Electronics

New Zealand . 600 parts In-Stock

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$0.079

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$0.072

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$0.065

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600

$0.079

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Metaverse IC Inc.

Canada . 98,689 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 2,364 parts In-Stock

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Component Stockers USA

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Northwest PG Solutions

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Technical Specifications

Bridge Rectifier Diodes 2W04M attributes and parameters. Explore more Bridge Rectifier Diodes devices from Daco Semiconductor

Specs

Minimum Breakdown Voltage:

400 V

Config:

BRIDGE, 4 ELEMENTS

Diode Element Material:

SILICON

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

O-PBCY-W4

Maximum Non Repetitive Peak Forward Current:

60 A

No. of Elements:

4

No. of Phases:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

2 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Repetitive Peak Reverse Voltage:

400 V

Maximum Reverse Current:

10 uA

Reverse Test Voltage:

400 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

2W04M Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Daco Semiconductor

DACO, established in 1994 , is the pioneer and innovative manufacturer of wafer and module device assembly in Taiwan dedicated in the designing, manufacturing of superior Semiconductor products covering discrete parts and modules of IGBT , SiC (Silicon Carbide) Diode , SiC (Silicon Carbide) MOSFET, Silicon Diode, Schottky, MOSFET and Thyristor. Cutting Edge Technology and Performance: The founder of DACO, who comes from the Semiconductor Research Center of National Science Council in Taiwan, is experienced in the fabrication of Metal Gat IC, Poly Gat IC, Power MOS, and Sipos GPP wafer. With the excellent technology, he has been leading DACO in an outstanding position in the trend of advanced technology in power electronic semiconductors. For the past years, DACO had been maintaining collaborative relationship with the companies serving military applications in researching and manufacturing high power rectifier modules on military specifications. In the recent years, our R&D team has been developing cutting edge technology to obtain various patents, and implementing vertical technology to upgrade the service to customers.

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