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NE85635

Asi Semiconductor

NE85635 by Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .58 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50;

Median Price

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Lifecycle Status

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3

In-Stock Inventory

< 1k

NE85635 by Asi Semiconductor
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LWI Electronics Inc

India . 100 parts In-Stock

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100

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Elcom Components

USA . 63 parts In-Stock

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63

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ECAB

Sweden . 5 parts In-Stock

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Authorized Procurement Solutions

USA . 4,500 parts In-Stock

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4,500

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Perfect Parts

USA . 560 parts In-Stock

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560

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Technical Specifications

Other Function Transistors NE85635 attributes and parameters. Explore more Other Function Transistors devices from Asi Semiconductor

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

50

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Trade Compliance

NE85635 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-394-4875, 5961013944875, 5961-01-377-0736, 5961013770736

NIIN

013944875, 013770736

Manufacturer Highlights

Asi Semiconductor

ASI Semiconductor, Inc. (ASI) designs, supplies and markets state-of-the-art high power, pulsed RF transistors and pallets. We proudly serve thousands of customers in dozens of countries, specifically focusing on pulsed RF commercial applications for avionics, radar, medical and industrial applications. We are introducing VIMOS technology to meet the needs and requirements of this unique marketplace. We have supported this industry for over 30 years which has included several governments and Fortune 500 customers. ASI was founded in 1979 and is ISO 9001 certified. Our headquarters is located in North Hollywood, CA, USA.

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