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HMC483MS8GE

Analog Devices

HMC483MS8GE by Analog Devices

Analog Devices' HMC483MS8GE is a RF/Microwave Mixer with 27 dBm CW input power, 12 dB conversion loss, and 50 ohm impedance. It operates b/w -40 to 85 °C and covers frequencies from 700 MHz to 1400 MHz. Ideal for applications requiring high-performance double balanced mixers in RF systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Chip Stock

USA . 15,200 parts In-Stock

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Vyrian

USA . 6,818 parts In-Stock

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Digiode

USA . 730 parts In-Stock

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730

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Cyclops Electronics Ltd

UK . 40 parts In-Stock

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40

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North Shore Components

USA . 9 parts In-Stock

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9

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Distributors (Availability)

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Parana Technologies

USA . 456 parts In-Stock

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$1.444

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$1.343

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456

$1.444

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$1.343

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IDEA Electronic Components Group

UK . 624 parts In-Stock

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$1.553

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$1.475

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624

$1.553

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$1.475

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DigiPath Technology Company

USA . 1,362 parts In-Stock

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$2.423

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$2.326

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AZTECH Wire

Italy . 214 parts In-Stock

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$5.761

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One Stop Electronics

USA . 237 parts In-Stock

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$24.000

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$24.000

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Semicontronic

India . 437 parts In-Stock

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$25.000

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$24.375

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$24.250

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437

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S.R.D Solutions

India . 3,000 parts In-Stock

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RC Electronics

USA . 2,500 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Perfect Parts

USA . 871 parts In-Stock

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871

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Corphita

USA . 849 parts In-Stock

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849

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Elevate your RF/Microwave applications with the HMC483MS8GE by Analog Devices. Known for their top-notch quality and reliability, Analog Devices brings you a double balanced mixer that offers unmatched performance and precision. With a maximum input power of 27 dBm and a wide operating frequency range from 700 MHz to 1400 MHz, this component is perfect for a variety of applications. Experience the benefits of reduced conversion loss and superior impedance matching, all in a compact and durable construction. Trust Analog Devices to deliver cutting-edge technology that will take your projects to the next level.

Feature Benefit Bullets

Maximum Input Power (CW) 27 dBm

With a high maximum input power of 27 dBm, this mixer can handle strong signals without distortion, making it suitable for high-power applications.

Construction COMPONENT

The component-level construction ensures high reliability and performance, making this mixer a durable and long-lasting choice.

Maximum Operating Temperature 85 °C

With a maximum operating temperature of 85°C, this mixer can withstand high temperatures, making it suitable for a wide range of environments and applications.

Minimum Operating Temperature -40 °C

The low minimum operating temperature of -40°C allows this mixer to operate in cold conditions without any performance issues, making it versatile for various settings.

Terminal Finish MATTE TIN

The matte tin terminal finish provides excellent connectivity and corrosion resistance, ensuring stable performance over time.

RF or Microwave Device Type DOUBLE BALANCED

Being a double balanced mixer, this device offers superior rejection of unwanted signals and provides high linearity, making it ideal for demanding RF and microwave applications.

Characteristic Impedance 50 ohm

With a standard characteristic impedance of 50 ohm, this mixer is compatible with most RF systems and ensures efficient signal transfer.

Maximum Conversion Loss 12 dB

Despite the conversion loss of 12 dB, this mixer still maintains good performance and efficiency, making it a cost-effective choice for various applications.

Minimum Operating Frequency 700 MHz

The low minimum operating frequency of 700 MHz enables this mixer to work effectively across a broad frequency range, making it versatile for multi-band applications.

Maximum Operating Frequency 1400 MHz

With a high maximum operating frequency of 1400 MHz, this mixer is suitable for high-frequency RF and microwave applications, offering flexibility and performance.

Technical Specifications

RF/Microwave Mixers HMC483MS8GE attributes and parameters. Explore more RF/Microwave Mixers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Maximum Conversion Loss:

12 dB

Maximum Input Power (CW):

27 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

1400 MHz

Minimum Operating Frequency:

700 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

MATTE TIN

Trade Compliance

HMC483MS8GE RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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