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ADL5531ACPZ-WP

Analog Devices

ADL5531ACPZ-WP by Analog Devices

ADL5531ACPZ-WP by Analog Devices is a RF amplifier with 19.7 dB gain, suitable for narrow band medium power applications. It operates b/w 20-500 MHz frequencies, handles up to 12 dBm input power, and has a temperature range of -40 to 85 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,015 parts In-Stock

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Digiode

USA . 798 parts In-Stock

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798

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Distributors (Availability)

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Parana Technologies

USA . 344 parts In-Stock

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$1.340

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$1.246

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344

$1.340

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$1.246

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IDEA Electronic Components Group

UK . 329 parts In-Stock

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$1.441

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$1.369

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329

$1.441

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$1.369

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DigiPath Technology Company

USA . 1,523 parts In-Stock

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$2.248

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$2.158

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Ampacity Inc.

Singapore . 701 parts In-Stock

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$6.000

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701

$6.000

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AZTECH Wire

Italy . 199 parts In-Stock

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$8.325

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$8.325

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Semicontronic

India . 451 parts In-Stock

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$24.000

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$23.400

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$23.280

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451

$24.000

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Native Components

USA . 475 parts In-Stock

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$28.406

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$28.406

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Northwest PG Solutions

USA . 1,287 parts In-Stock

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$31.247

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$28.122

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$31.247

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One Stop Electronics

USA . 1,054 parts In-Stock

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$37.000

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$37.000

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Corphita

USA . 799 parts In-Stock

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799

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Overview

Experience unmatched performance with the ADL5531ACPZ-WP by Analog Devices. As a leader in RF & Microwave Amplifiers, Analog Devices delivers top-notch quality and reliability in their products. The ADL5531ACPZ-WP offers a wide range of applications from narrow band medium power to 50 ohm characteristic impedance. With a gain of 19.7 dB and a maximum input power of 12 dBm, this component is designed to excel in various operating temperatures and frequencies. Trust Analog Devices to provide value, benefits, and advantages that exceed customer expectations.

Feature Benefit Bullets

Maximum Input Power (CW): 12 dBm

With a maximum input power of 12 dBm, this RF & Microwave Amplifier can handle high power input signals without getting damaged, making it a reliable choice for demanding applications.

Construction: COMPONENT

The use of high-quality components in the construction of this amplifier ensures long-term reliability and stable performance, making it a durable choice for various applications.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85 °C, this amplifier can withstand high temperatures, making it suitable for use in harsh environments where temperature fluctuations are common.

Minimum Operating Temperature: -40 °C

The ability of this amplifier to operate at temperatures as low as -40 °C makes it suitable for use in cold environments, ensuring consistent performance even in extreme conditions.

Terminal Finish: Matte Tin (Sn)

The terminal finish of matte tin provides excellent conductivity and corrosion resistance, ensuring stable connections for optimal performance of the amplifier.

RF or Microwave Device Type: NARROW BAND MEDIUM POWER

Being a narrow band medium power amplifier, this product offers a balance between bandwidth and power output, making it suitable for applications that require moderate power within a specific frequency range.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with standard RF signal transmission systems, ensuring seamless integration and efficient signal transfer.

Gain: 19.7 dB

The high gain of 19.7 dB provided by this amplifier amplifies weak input signals to stronger output signals, enhancing the overall signal strength and improving the performance of the system.

Minimum Operating Frequency: 20 MHz

With a minimum operating frequency of 20 MHz, this amplifier is capable of amplifying signals in the lower frequency range, making it suitable for a wide range of applications that require signal amplification at lower frequencies.

Maximum Operating Frequency: 500 MHz

The ability of this amplifier to operate efficiently at frequencies up to 500 MHz makes it suitable for applications that require signal amplification in the mid to high-frequency range, providing versatility and flexibility in signal processing.

Technical Specifications

RF & Microwave Amplifiers ADL5531ACPZ-WP attributes and parameters. Explore more RF & Microwave Amplifiers devices from Analog Devices

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

19.7 dB

Maximum Input Power (CW):

12 dBm

JESD-609 Code:

e3

Maximum Operating Frequency:

500 MHz

Minimum Operating Frequency:

20 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

RF or Microwave Device Type:

Terminal Finish:

Matte Tin (Sn)

Trade Compliance

ADL5531ACPZ-WP RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

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