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Solitron Devices Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
WC191 by Solitron Devices

WC191

Solitron Devices

The Solitron Devices WC191 is a P-CHANNEL FET with 30V DS Breakdown Voltage. Featuring 2 elements in a DIE package, it has an RDS(on) of 300 ohm and Crss of 1.5 pF. Ideal for applications requiring low feedback capacitance and high breakdown voltage in enhancement mode operation.

SEPARATE, 2 ELEMENTS

30 V

300 ohm

METAL-OXIDE SEMICONDUCTOR

1.5 pF

DIE-6

2

6

ENHANCEMENT MODE

DIE

NOT SPECIFIED

P-CHANNEL

Not Qualified

NOT SPECIFIED

SILICON