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Panasonic Small Signal Field Effect Transistors (FET) 6

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
FK3503010L by Panasonic

FK3503010L

Panasonic

Panasonic FK3503010L is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 0.1A Drain Current, 6 ohm On Resistance, and 150°C Operating Temperature. Package: PLASTIC/EPOXY, Surface Mountable RECTANGULAR shape with FLAT terminals.

SINGLE WITH BUILT-IN DIODE

30 V

.1 A

.1 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.15 W

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

MTM78E2B0LBF by Panasonic

MTM78E2B0LBF

Panasonic

Panasonic MTM78E2B0LBF is a N-CHANNEL FET with 2 elements, diode, and resistor. It operates in enhancement mode for switching applications. Features include 20V breakdown voltage, 4A drain current, 0.025 ohm on resistance, and 150°C max temp.

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

20 V

4 A

4 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.7 W

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

FC6946010R by Panasonic

FC6946010R

Panasonic

FC6946010R by Panasonic is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a 60V DS Breakdown Voltage, 0.1A Drain Current, and 15 ohm On Resistance. Operating in ENHANCEMENT MODE, it features a max power dissipation of 0.125W at 150°C.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

.1 A

.1 A

15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

.125 W

FET General Purpose Power

YES

FLAT

DUAL

NOT SPECIFIED

SWITCHING

SILICON

FJ3303010L by Panasonic

FJ3303010L

Panasonic

FJ3303010L by Panasonic is a N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a SINGLE configuration with BUILT-IN DIODE. With 0.1A ID and 6 ohm RDS(on), this METAL-OXIDE SEMICONDUCTOR device comes in SMALL OUTLINE package for surface mount installation.

SINGLE WITH BUILT-IN DIODE

30 V

.1 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

1

1

3

DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

FLAT

DUAL

SWITCHING

SILICON

MTM763200LBF by Panasonic

MTM763200LBF

Panasonic

Panasonic MTM763200LBF is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Ideal for switching applications, it operates in enhancement mode with max ID of 1.9A and RDS(on) of 0.105 ohm. Features METAL-OXIDE SEMICONDUCTOR tech and PLASTIC/EPOXY package for surface mount assembly.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

1.9 A

.105 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e6

1

2

6

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL AND P-CHANNEL

YES

TIN BISMUTH

FLAT

DUAL

SWITCHING

SILICON

FK3303010L by Panasonic

FK3303010L

Panasonic

Panasonic FK3303010L is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in DEPLETION MODE. With 0.1A ID and 6Ω RDS(on), this SMD transistor is suitable for various electronic devices.

SINGLE WITH BUILT-IN DIODE

30 V

.1 A

6 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F3

e6

1

1

3

DEPLETION MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

TIN BISMUTH

FLAT

DUAL

SWITCHING

SILICON