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Alpha & Omega Semiconductor Small Signal Field Effect Transistors (FET) 22

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
AO4407L by Alpha & Omega Semiconductor

AO4407L

Alpha & Omega Semiconductor

AO4407L by Alpha & Omega Semiconductor is a P-CHANNEL FET used for switching applications. It has a min DS breakdown voltage of 30V, max drain current of 12A, and max operating temperature of 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

12 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

423 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

3.1 W

YES

GULL WING

DUAL

SWITCHING

SILICON

AO4606 by Alpha & Omega Semiconductor

AO4606

Alpha & Omega Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .03 ohm; Package Style (Meter): SMALL OUTLINE;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

6 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

50 pF

R-PDSO-G8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL AND P-CHANNEL

2 W

YES

GULL WING

DUAL

SWITCHING

SILICON

AO4441L by Alpha & Omega Semiconductor

AO4441L

Alpha & Omega Semiconductor

AO4441L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 4A ID and 0.1 ohm RDS(on), it offers high performance in a small outline package suitable for various electronic designs.

SINGLE WITH BUILT-IN DIODE

60 V

4 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

35 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

AO3401L by Alpha & Omega Semiconductor

AO3401L

Alpha & Omega Semiconductor

AO3401L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.2A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring 0.05 ohm RDS(on) and 77 pF Crss capacitance.

SINGLE WITH BUILT-IN DIODE

30 V

4.2 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

77 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

AO3402L by Alpha & Omega Semiconductor

AO3402L

Alpha & Omega Semiconductor

AO3402L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 4A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150°C. Features include 0.055 ohm RDS(on), 41pF Crss, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.

SINGLE WITH BUILT-IN DIODE

30 V

4 A

.055 ohm

METAL-OXIDE SEMICONDUCTOR

41 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

AO3409L by Alpha & Omega Semiconductor

AO3409L

Alpha & Omega Semiconductor

AO3409L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.6A and 0.13 ohm RDS(ON), operating in the temperature range of -55 to 150 °C. The transistor has a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology, making it suitable for surface mount configurations.

SINGLE WITH BUILT-IN DIODE

30 V

2.6 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

53 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

AO3413L by Alpha & Omega Semiconductor

AO3413L

Alpha & Omega Semiconductor

AO3413L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150°C. Featuring a 0.097 ohm RDS(ON) and 49pF Crss, this MOSFET is designed for surface mount with GULL WING terminals.

SINGLE WITH BUILT-IN DIODE

20 V

3 A

.097 ohm

METAL-OXIDE SEMICONDUCTOR

49 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

AO3419L by Alpha & Omega Semiconductor

AO3419L

Alpha & Omega Semiconductor

AO3419L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.5A and 0.075 ohm RDS(ON), operating in the temperature range of -55 to 150 °C. The transistor has a GULL WING terminal form, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.

SINGLE WITH BUILT-IN DIODE

20 V

3.5 A

.075 ohm

METAL-OXIDE SEMICONDUCTOR

62 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

AO4407AL by Alpha & Omega Semiconductor

AO4407AL

Alpha & Omega Semiconductor

AO4407AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 12A, 0.013 ohm RDS(ON), and 295pF Crss. Operating from -55 to 150 °C, this MOSFET has GULL WING terminals in an 8-terminal SMALL OUTLINE package.

SINGLE WITH BUILT-IN DIODE

30 V

12 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

295 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

AO4485L by Alpha & Omega Semiconductor

AO4485L

Alpha & Omega Semiconductor

AO4485L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage and 10A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.015 ohm RDS(ON) and 180pF Crss.

SINGLE WITH BUILT-IN DIODE

40 V

10 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

180 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.7 W

YES

GULL WING

DUAL

SWITCHING

SILICON

AO4447AL by Alpha & Omega Semiconductor

AO4447AL

Alpha & Omega Semiconductor

AO4447AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, 17A ID, and 0.007 ohm RDS(ON). Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and resistor. Operating in ENHANCEMENT MODE, this MOSFET has a max temp of 150°C and -55°C min temp.

SINGLE WITH BUILT-IN DIODE AND RESISTOR

30 V

17 A

.007 ohm

METAL-OXIDE SEMICONDUCTOR

564 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

YES

GULL WING

DUAL

SWITCHING

SILICON

AO3401AL by Alpha & Omega Semiconductor

AO3401AL

Alpha & Omega Semiconductor

AO3401AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 4.3A and RDS(on) of 0.044 ohm, making it suitable for various small outline surface mount designs.

SINGLE WITH BUILT-IN DIODE

30 V

4.3 A

.044 ohm

METAL-OXIDE SEMICONDUCTOR

81 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.4 W

YES

GULL WING

DUAL

SWITCHING

SILICON

AO7800 by Alpha & Omega Semiconductor

AO7800

Alpha & Omega Semiconductor

AO7800 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It operates in ENHANCEMENT MODE, has 20V DS Breakdown Voltage, 0.3W Power Dissipation, and 0.9A Drain Current. With GULL WING terminals, it's a small outline package suitable for surface mount technology.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

.9 A

.3 ohm

METAL-OXIDE SEMICONDUCTOR

14 pF

R-PDSO-G6

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.3 W

YES

GULL WING

DUAL

SWITCHING

SILICON

AO3402 by Alpha & Omega Semiconductor

AO3402

Alpha & Omega Semiconductor

AO3402 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS breakdown voltage and 4A ID. Ideal for switching applications, it features a built-in diode, 0.052 ohm RDS(on), and 25pF Crss. The GULL WING terminal form and small outline package make it suitable for surface mount designs.

SINGLE WITH BUILT-IN DIODE

30 V

4 A

.052 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AO3401 by Alpha & Omega Semiconductor

AO3401

Alpha & Omega Semiconductor

AO3401 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and 4A ID, 0.05 ohm RDS(on). This ENHANCEMENT MODE transistor has GULL WING terminals in a SMALL OUTLINE package.

SINGLE WITH BUILT-IN DIODE

30 V

4 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AO3409 by Alpha & Omega Semiconductor

AO3409

Alpha & Omega Semiconductor

AO3409 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 2.6A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.11 ohm RDS(ON) and 37pF Crss.

SINGLE WITH BUILT-IN DIODE

30 V

2.6 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

P-CHANNEL

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AO3415 by Alpha & Omega Semiconductor

AO3415

Alpha & Omega Semiconductor

AO3415 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features a 1.4W Power Dissipation, -55 to 150 °C Operating Temperature, and METAL-OXIDE SEMICONDUCTOR technology. The SMALL OUTLINE package with GULL WING terminals makes it suitable for surface mount designs.

SINGLE WITH BUILT-IN DIODE

20 V

4 A

4 A

.054 ohm

METAL-OXIDE SEMICONDUCTOR

110 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.4 W

30 A

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

AO4406AL by Alpha & Omega Semiconductor

AO4406AL

Alpha & Omega Semiconductor

AO4406AL by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage. It features 13A ID, 0.0115 ohm RDS(on), and 100pF Crss. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and SINGLE configuration with BUILT-IN DIODE.

SINGLE WITH BUILT-IN DIODE

30 V

13 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

100 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

Not Qualified

YES

GULL WING

DUAL

SWITCHING

SILICON

AO4822 by Alpha & Omega Semiconductor

AO4822

Alpha & Omega Semiconductor

AO4822 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features 2 elements with built-in diode, 8A max ID, and 0.019 ohm max RDS(on). The small outline package with gull wing terminals makes it suitable for surface mount designs.

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

8 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

115 pF

R-PDSO-G8

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

Not Qualified

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AO3406L by Alpha & Omega Semiconductor

AO3406L

Alpha & Omega Semiconductor

AO3406L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS breakdown voltage and 0.065 ohm RDS(on). It's used for switching applications in enhancement mode, featuring a single configuration with built-in diode. The transistor is surface mountable, with GULL WING terminals in a SMALL OUTLINE package.

SINGLE WITH BUILT-IN DIODE

30 V

.065 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AO3416L by Alpha & Omega Semiconductor

AO3416L

Alpha & Omega Semiconductor

AO3416L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 20V DS breakdown voltage. It features single configuration with built-in diode, 0.022 ohm RDS(on), and operates in enhancement mode for switching applications. The transistor is surface mountable, has GULL WING terminals, and uses metal-oxide semiconductor technology in a small outline package.

SINGLE WITH BUILT-IN DIODE

20 V

.022 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

YES

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

AO4292E by Alpha & Omega Semiconductor

AO4292E

Alpha & Omega Semiconductor

AO4292E by Alpha & Omega Semiconductor is a N-CHANNEL FET with 100V DS breakdown voltage, 8A ID, and 0.023 ohm RDS(on). It is used for switching applications in enhancement mode, featuring a built-in diode. The transistor comes in a small outline package with gull wing terminals for surface mount assembly.

SINGLE WITH BUILT-IN DIODE

100 V

8 A

.023 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON