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43 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTTFS4932NTWG by Onsemi

NTTFS4932NTWG

Onsemi

NTTFS4932NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 79A Drain Current, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE, 0.0055 ohm On Resistance, and operates in ENHANCEMENT MODE. This MOSFET has a max power dissipation of 43W and can withstand temperatures up to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

79 A

11 A

.0055 ohm

METAL-OXIDE SEMICONDUCTOR

S-XDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

43 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON