Loading...

40 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SK3386(0)-Z-E1-AZ by Renesas Electronics

2SK3386(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Maximum Drain Current (Abs) (ID): 34 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

34 A

34 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

40 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3402(0)-Z-E1-AZ by Renesas Electronics

2SK3402(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

36 A

36 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

40 W

FET General Purpose Power

YES

NOT SPECIFIED

2SK3483(0)-Z-E1-AZ by Renesas Electronics

2SK3483(0)-Z-E1-AZ

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 40 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): 28 A;

SINGLE

28 A

28 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

40 W

FET General Purpose Power

YES

NOT SPECIFIED