Loading...

3.2 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTLJS4149PTAG by Onsemi

NTLJS4149PTAG

Onsemi

NTLJS4149PTAG by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.5A Drain Current, ideal for SWITCHING applications. It features a SINGLE configuration with BUILT-IN DIODE in a PLASTIC/EPOXY package, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

4.5 A

2.7 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

3.2 W

Not Qualified

Other Transistors

YES

TIN

NO LEAD

DUAL

SWITCHING

SILICON

NTLJS4149PTBG by Onsemi

NTLJS4149PTBG

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.2 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 6;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

4.5 A

2.7 A

.062 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

P-CHANNEL

3.2 W

Not Qualified

Other Transistors

YES

TIN

NO LEAD

DUAL

SWITCHING

SILICON