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29.8 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTTFS4939NTWG by Onsemi

NTTFS4939NTWG

Onsemi

NTTFS4939NTWG by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 52A Drain Current, and 0.008 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 29.8W. This surface mount transistor has a SQUARE package shape and operates at up to 150 °C temperature.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

52 A

8.9 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

S-XDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

29.8 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON