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23.2 W Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTMFS4925NET1G by Onsemi

NTMFS4925NET1G

Onsemi

NTMFS4925NET1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 48A ID, and 0.001 ohm RDS. Ideal for power management applications due to its 23.2W Pdiss and ENHANCEMENT MODE operation at up to 150 °C. Suitable for surface mount designs with PLASTIC/EPOXY package and built-in diode configuration.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

48 A

16.7 A

.001 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

3

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

23.2 W

FET General Purpose Power

YES

TIN

FLAT

DUAL

SILICON