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20 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
SFT1407-TL-E by Onsemi

SFT1407-TL-E

Onsemi

SFT1407-TL-E by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 45V DS Breakdown Voltage, 14A ID, and 0.028 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.

DRAIN

SINGLE

45 V

14 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

190 pF

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1 W

20 W

YES

Tin/Bismuth (Sn/Bi)

GULL WING

SINGLE

SWITCHING

SILICON

2SJ325-AY by Renesas Electronics

2SJ325-AY

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

NO

NOT SPECIFIED

2SJ325-Z-AY by Renesas Electronics

2SJ325-Z-AY

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

YES

NOT SPECIFIED

2SJ325-Z-E1-AZ by Renesas Electronics

2SJ325-Z-E1-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 4 A;

SINGLE

4 A

4 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

P-CHANNEL

20 W

Other Transistors

YES

NOT SPECIFIED