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2.4 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTMS4872NR2G by Onsemi

NTMS4872NR2G

Onsemi

NTMS4872NR2G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 10.2A Drain Current, ideal for SWITCHING applications. It features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 2.4W. This small outline transistor has GULL WING terminals and can handle up to 150 °C operating temperature.

SINGLE WITH BUILT-IN DIODE

30 V

10.2 A

6 A

.0135 ohm

METAL-OXIDE SEMICONDUCTOR

200 pF

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

2.4 W

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

DUAL

NOT SPECIFIED

SWITCHING

SILICON

PCF8051LW by Onsemi

PCF8051LW

Onsemi

PCF8051LW by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It operates in ENHANCEMENT MODE with 10A ID and 0.018 ohm RDS(on), suitable for high power dissipation up to 2.4W at temperatures ranging from -55 to 150 °C.

SINGLE WITH BUILT-IN DIODE

40 V

10 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

R-XUUC-N3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

N-CHANNEL

2.4 W

YES

NO LEAD

UPPER

SWITCHING

SILICON