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2.3 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN3030LFG-13 by Diodes Incorporated

DMN3030LFG-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; No. of Elements: 1; JESD-609 Code: e3;

SINGLE

8.6 A

8.6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

N-CHANNEL

2.3 W

FET General Purpose Power

YES

MATTE TIN

30

DMN3030LFG-7 by Diodes Incorporated

DMN3030LFG-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (ID): 8.6 A; Terminal Finish: MATTE TIN;

SINGLE

8.6 A

8.6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

N-CHANNEL

2.3 W

FET General Purpose Power

YES

MATTE TIN

30

DMN2012UCA6-7 by Diodes Incorporated

DMN2012UCA6-7

Diodes Incorporated

N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Package Body Material: UNSPECIFIED; Terminal Finish: NICKEL PALLADIUM GOLD;

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

24 V

METAL-OXIDE SEMICONDUCTOR

102 pF

R-XBCC-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

N-CHANNEL

2.3 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

SWITCHING

SILICON