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2.03 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN2013UFDEQ-7 by Diodes Incorporated

DMN2013UFDEQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; JESD-30 Code: S-PBCC-N3; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

20 V

10.5 A

10.5 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBCC-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

CHIP CARRIER

260

N-CHANNEL

2.03 W

AEC-Q101

FET General Purpose Power

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SWITCHING

SILICON

DMN4020LFDE-13 by Diodes Incorporated

DMN4020LFDE-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Peak Reflow Temperature (C): 260; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

6.7 A

.02 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N3

e4

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.03 W

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

DMN10H170SFDE-13 by Diodes Incorporated

DMN10H170SFDE-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; JESD-30 Code: S-PDSO-N6; Terminal Finish: NICKEL PALLADIUM GOLD;

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

2.9 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

S-PDSO-N6

e4

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.03 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMN3021LFDF-13 by Diodes Incorporated

DMN3021LFDF-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.03 W; Minimum Operating Temperature: -55 Cel; No. of Terminals: 6;

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

9.3 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

81 pF

S-PDSO-N6

e4

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

2.03 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON