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1.7 W Small Signal Field Effect Transistors (FET) 6

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
AO4485L by Alpha & Omega Semiconductor

AO4485L

Alpha & Omega Semiconductor

AO4485L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage and 10A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.015 ohm RDS(ON) and 180pF Crss.

SINGLE WITH BUILT-IN DIODE

40 V

10 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

180 pF

R-PDSO-G8

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.7 W

YES

GULL WING

DUAL

SWITCHING

SILICON

DMN2014LHAB-7 by Diodes Incorporated

DMN2014LHAB-7

Diodes Incorporated

DMN2014LHAB-7 by Diodes Inc. is a N-channel FET with 2 elements and built-in diode for switching applications. It operates in enhancement mode, has a max drain current of 9A, and low on-resistance of 0.013 ohm. With AEC-Q101 standard compliance, it's ideal for automotive electronics requiring high power dissipation up to 1.7W at temperatures ranging from -55 to 150°C.

HIGH RELIABILITY

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

9 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

145 pF

R-PDSO-N4

e4

1

2

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.7 W

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

30

SWITCHING

SILICON

NUS3116MTR2G by Onsemi

NUS3116MTR2G

Onsemi

NUS3116MTR2G by Onsemi is a P-CHANNEL FET for SWITCHING applications. Features include 12V DS Breakdown Voltage, 5.47A Drain Current, and 0.05 ohm On Resistance. With ENHANCEMENT MODE operation and 150 °C max temp, it's ideal for high-power switching circuits in compact designs.

SINGLE WITH BUILT-IN DIODE

12 V

5.47 A

4.4 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

S-XBCC-N8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

SQUARE

CHIP CARRIER

260

P-CHANNEL

1.7 W

Not Qualified

Other Transistors

YES

TIN

NO LEAD

BOTTOM

SWITCHING

SILICON

SI2334DS-T1-GE3 by Vishay Intertechnology

SI2334DS-T1-GE3

Vishay Intertechnology

SI2334DS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 30V DS breakdown voltage and 4.9A max drain current. Ideal for switching applications, it operates in enhancement mode with 0.044 ohm on-resistance. The transistor comes in a small outline package with gull wing terminals, suitable for surface mount assembly at temperatures up to 150°C.

SINGLE WITH BUILT-IN DIODE

30 V

4.9 A

4.9 A

.044 ohm

METAL-OXIDE SEMICONDUCTOR

TO-236

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

1.7 W

Not Qualified

FET General Purpose Powers

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN1014UFDF-13 by Diodes Incorporated

DMN1014UFDF-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Feedback Capacitance (Crss): 121 pF; Transistor Element Material: SILICON;

SINGLE WITH BUILT-IN DIODE

12 V

8 A

.016 ohm

METAL-OXIDE SEMICONDUCTOR

121 pF

S-PDSO-N6

e4

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.7 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

NTLUD4C26NTBG by Onsemi

NTLUD4C26NTBG

Onsemi

NTLUD4C26NTBG by Onsemi is a Small Signal FET with 2 elements, built-in diode, and N-channel polarity. Ideal for switching applications, it has a max drain current of 4.8A, on-resistance of 0.021 ohm, and operates b/w -55 to 150 °C. This MOSFET in a square package with no lead terminals is designed for surface mount assembly.

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

4.8 A

.021 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.7 W

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON