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1.53 W Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
NTLUS4C16NTBG by Onsemi

NTLUS4C16NTBG

Onsemi

NTLUS4C16NTBG by Onsemi is a small signal FET with N-channel polarity, suitable for switching applications. It features a 30V min DS breakdown voltage, 6.1A max drain current, and 0.0114 ohm max drain-source resistance. Ideal for enhancement mode operation in various electronic devices requiring high power dissipation and temperature tolerance up to 150 °C.

ULTRA LOW RESISTANCE

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

6.1 A

.0114 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.53 W

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

DMP1008UCB9-7 by Diodes Incorporated

DMP1008UCB9-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.53 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e1;

SINGLE WITH BUILT-IN DIODE AND RESISTOR

8 V

13.2 A

.0091 ohm

METAL-OXIDE SEMICONDUCTOR

S-PBGA-B9

e1

1

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

GRID ARRAY

260

P-CHANNEL

1.53 W

YES

TIN SILVER COPPER

BALL

BOTTOM

SWITCHING

SILICON