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1.4 W Small Signal Field Effect Transistors (FET) 7

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
AO3401AL by Alpha & Omega Semiconductor

AO3401AL

Alpha & Omega Semiconductor

AO3401AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 4.3A and RDS(on) of 0.044 ohm, making it suitable for various small outline surface mount designs.

SINGLE WITH BUILT-IN DIODE

30 V

4.3 A

.044 ohm

METAL-OXIDE SEMICONDUCTOR

81 pF

TO-236

R-PDSO-G3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.4 W

YES

GULL WING

DUAL

SWITCHING

SILICON

DMC6070LFDH-7 by Diodes Incorporated

DMC6070LFDH-7

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Finish: MATTE TIN; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

3.1 A

3.1 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.4 W

AEC-Q101

Other Transistors

YES

MATTE TIN

NO LEAD

DUAL

30

SWITCHING

SILICON

AO3415 by Alpha & Omega Semiconductor

AO3415

Alpha & Omega Semiconductor

AO3415 by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage and 4A Drain Current. Ideal for SWITCHING applications, it features a 1.4W Power Dissipation, -55 to 150 °C Operating Temperature, and METAL-OXIDE SEMICONDUCTOR technology. The SMALL OUTLINE package with GULL WING terminals makes it suitable for surface mount designs.

SINGLE WITH BUILT-IN DIODE

20 V

4 A

4 A

.054 ohm

METAL-OXIDE SEMICONDUCTOR

110 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.4 W

30 A

Not Qualified

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

BSO150N03 by Infineon Technologies

BSO150N03

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Terminal Position: DUAL; JEDEC-95 Code: MS-012AA;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

7.6 A

7.6 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

100 pF

MS-012AA

R-PDSO-G8

e3

3

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.4 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

BSO350N03 by Infineon Technologies

BSO350N03

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain-Source On Resistance: .035 ohm; JESD-30 Code: R-PDSO-G8;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

5 A

5 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

MS-012AA

R-PDSO-G8

e3

3

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.4 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN1029UFDB-13 by Diodes Incorporated

DMN1029UFDB-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Style (Meter): SMALL OUTLINE;

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

5.6 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

119 pF

S-PDSO-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

1.4 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMC6070LND-13 by Diodes Incorporated

DMC6070LND-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Drain Current (ID): 2.4 A; Terminal Finish: MATTE TIN;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

2.4 A

.085 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F8

e3

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.4 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON