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1.36 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMC1030UFDBQ-13 by Diodes Incorporated

DMC1030UFDBQ-13

Diodes Incorporated

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Package Shape: SQUARE; Maximum Operating Temperature: 150 Cel;

HIGH RELIABILITY

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

12 V

5.1 A

.034 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL AND P-CHANNEL

1.36 W

AEC-Q101

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMN3055LFDB-13 by Diodes Incorporated

DMN3055LFDB-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; JESD-609 Code: e4; Maximum Feedback Capacitance (Crss): 44 pF;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

5 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

44 pF

S-PDSO-N6

e4

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

1.36 W

YES

NICKEL PALLADIUM GOLD

NO LEAD

DUAL

SWITCHING

SILICON

DMP1070UCA3-7 by Diodes Incorporated

DMP1070UCA3-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Additional Features: ESD PROTECTED; Transistor Element Material: SILICON;

ESD PROTECTED

DRAIN

SINGLE WITH BUILT-IN DIODE

12 V

3.6 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

P-CHANNEL

1.36 W

YES

NICKEL PALLADIUM GOLD/NICKEL GOLD

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON

DMP1070UCA3-7A by Diodes Incorporated

DMP1070UCA3-7A

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.36 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; JESD-30 Code: R-XBCC-N3;

ESD PROTECTED

DRAIN

SINGLE WITH BUILT-IN DIODE

12 V

3.6 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

P-CHANNEL

1.36 W

YES

NICKEL PALLADIUM GOLD/NICKEL GOLD

NO LEAD

BOTTOM

NOT SPECIFIED

SWITCHING

SILICON