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1.08 W Small Signal Field Effect Transistors (FET) 4

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMP2225LQ-7 by Diodes Incorporated

DMP2225LQ-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; No. of Elements: 1; Maximum Drain Current (ID): 2.6 A;

SINGLE

2.6 A

2.6 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

150 Cel

260

P-CHANNEL

1.08 W

Other Transistors

YES

MATTE TIN

30

DMP2225L-7 by Diodes Incorporated

DMP2225L-7

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;

HIGH RELIABILITY

SINGLE WITH BUILT-IN DIODE

20 V

2.6 A

2.6 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

1.08 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN3061SVT-13 by Diodes Incorporated

DMN3061SVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Operating Mode: ENHANCEMENT MODE; Package Style (Meter): SMALL OUTLINE;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

3.4 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

29 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.08 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN3270UVT-13 by Diodes Incorporated

DMN3270UVT-13

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.08 W; Transistor Element Material: SILICON; No. of Elements: 2;

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR

30 V

1.6 A

.27 ohm

METAL-OXIDE SEMICONDUCTOR

7.5 pF

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

1.08 W

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON