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.65 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN2215UDM-7 by Diodes Incorporated

DMN2215UDM-7

Diodes Incorporated

DMN2215UDM-7 by Diodes Inc. is a N-channel FET with 2 elements & built-in diode for switching applications. Features include 20V DS breakdown voltage, 2A max drain current, and 0.1 ohm max on resistance. Package style is small outline with Gull Wing terminals, operating up to 150°C.

HIGH RELIABILITY

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

20 V

2 A

2 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

1

2

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.65 W

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SWITCHING

SILICON

DMN3061SW-13 by Diodes Incorporated

DMN3061SW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

30 V

2.7 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

29 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.65 W

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

DMN2055UWQ-13 by Diodes Incorporated

DMN2055UWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .65 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;

SINGLE WITH BUILT-IN DIODE

20 V

3.1 A

.046 ohm

METAL-OXIDE SEMICONDUCTOR

37 pF

R-PDSO-G3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.65 W

AEC-Q101; IATF 16949

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON