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.43 W Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DMN30H4D1S-13 by Diodes Incorporated

DMN30H4D1S-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G3;

SINGLE WITH BUILT-IN DIODE

30 V

.43 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

R-PDSO-G3

e3

3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.43 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN30H4D1S-7 by Diodes Incorporated

DMN30H4D1S-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Terminal Form: GULL WING; No. of Elements: 1;

SINGLE WITH BUILT-IN DIODE

30 V

.43 A

4 ohm

METAL-OXIDE SEMICONDUCTOR

7 pF

R-PDSO-G3

e3

3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.43 W

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

DMN33D9LV-13A by Diodes Incorporated

DMN33D9LV-13A

Diodes Incorporated

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .43 W; Maximum Operating Temperature: 150 Cel; Package Style (Meter): SMALL OUTLINE;

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

.35 A

.0024 ohm

METAL-OXIDE SEMICONDUCTOR

8 pF

R-PDSO-F6

e3

2

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.43 W

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON