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SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR Small Signal Field Effect Transistors (FET) 2

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
LMN200B01-7 by Diodes Incorporated

LMN200B01-7

Diodes Incorporated

LMN200B01-7 by Diodes Inc. is a small signal N-channel FET with built-in bipolar transistor and resistor, used for switching applications. It has a max VCEsat of 0.3V, min DS breakdown voltage of 60V, and max operating temperature of 150°C.

BUILT IN BIAS RESISTOR

.2 A

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR

60

60 V

.115 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

.3 V

LMN400B01-7 by Diodes Incorporated

LMN400B01-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .4 A; JESD-30 Code: R-PDSO-G6;

BUILT IN BIAS RESISTOR

.4 A

SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR

70

60 V

.115 A

2 ohm

METAL-OXIDE SEMICONDUCTOR

5 pF

R-PDSO-G6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

.3 V