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SERIES, 2 ELEMENTS WITH BUILT-IN DIODE Small Signal Field Effect Transistors (FET) 1

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BSZ0907NDXTMA2 by Infineon Technologies

BSZ0907NDXTMA2

Infineon Technologies

N-CHANNEL; Configuration: SERIES, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: S-PDSO-N8; Maximum Drain Current (ID): 8.5 A; Additional Features: AVALANCHE RATED;

AVALANCHE RATED

DRAIN SOURCE

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

8.5 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-N8

2

8

ENHANCEMENT MODE

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

N-CHANNEL

YES

NO LEAD

DUAL

SILICON