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COMMON SOURCE, 2 ELEMENTS Small Signal Field Effect Transistors (FET) 3

Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BF1210,115 by NXP Semiconductors

BF1210,115

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G6; Transistor Element Material: SILICON;

COMMON SOURCE, 2 ELEMENTS

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

2

6

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

AMPLIFIER

SILICON

BF1214,115 by NXP Semiconductors

BF1214,115

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Package Style (Meter): SMALL OUTLINE; Maximum Drain Current (ID): .03 A;

COMMON SOURCE, 2 ELEMENTS

6 V

.03 A

.03 A

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G6

e3

2

6

DUAL GATE, ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

.18 W

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

NSVJ5908DSG5T1G by Onsemi

NSVJ5908DSG5T1G

Onsemi

NSVJ5908DSG5T1G by Onsemi is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. Operating in depletion mode, it has a max power dissipation of 0.3W and can handle a max drain current of 0.05A. This small outline transistor has a temp range of -55 to 150°C and is AEC-Q101 compliant.

LOW NOISE

COMMON SOURCE, 2 ELEMENTS

.05 A

JUNCTION

R-PDSO-F5

e6

1

2

5

DEPLETION MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

.3 W

.3 W

AEC-Q101

YES

TIN BISMUTH

FLAT

DUAL

30

AMPLIFIER

SILICON