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PNP Small Signal Bipolar Junction Transistors (BJT) 788

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
BCR153F-E6327 by Infineon Technologies

BCR153F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 20;

.1 A

20

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR162F-E6327 by Infineon Technologies

BCR162F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 20; Transistor Element Material: SILICON;

.1 A

20

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR151T-E6327 by Infineon Technologies

BCR151T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON; No. of Elements: 1;

.05 A

70

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR189F-E6327 by Infineon Technologies

BCR189F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; No. of Elements: 1;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR189T-E6327 by Infineon Technologies

BCR189T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR199T-E6327 by Infineon Technologies

BCR199T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Transistor Element Material: SILICON;

.07 A

120

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR164T-E6327 by Infineon Technologies

BCR164T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.1 A

30

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR196F-E6327 by Infineon Technologies

BCR196F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;

.07 A

50

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR196T-E6327 by Infineon Technologies

BCR196T-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;

.07 A

50

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR192F-E6327 by Infineon Technologies

BCR192F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;

.1 A

70

1

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR183F-E6327 by Infineon Technologies

BCR183F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;

.1 A

30

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

BCR198F-E6327 by Infineon Technologies

BCR198F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .07 A; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

.07 A

70

1

1

260

PNP

.25 W

BIP General Purpose Small Signal

YES

SILICON

FN4L4M-T1B-A by Renesas Electronics

FN4L4M-T1B-A

Renesas Electronics

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 85;

.1 A

85

e6

1

PNP

.2 W

BIP General Purpose Small Signal

YES

TIN BISMUTH

SILICON

ZTX1149ASTOB by Diodes Incorporated

ZTX1149ASTOB

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

PNP

1 W

1 W

NO

WIRE

SINGLE

SILICON

135 MHz

.3 V

ZTX1149ASTZ by Diodes Incorporated

ZTX1149ASTZ

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 135 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 3 A;

3 A

50 pF

25 V

SINGLE

115

R-PSIP-W3

e3

1

3

200 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

PNP

1 W

1 W

NO

MATTE TIN

WIRE

SINGLE

30

SILICON

135 MHz

.3 V

BCR185F-E6327 by Infineon Technologies

BCR185F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 70; Transistor Element Material: SILICON;

.1 A

70

1

PNP

.25 W

BIP General Purpose Small Signals

YES

SILICON

BCR169F-E6327 by Infineon Technologies

BCR169F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; No. of Elements: 1;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signals

YES

SILICON

BCR191F-E6327 by Infineon Technologies

BCR191F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;

.1 A

50

1

PNP

.25 W

BIP General Purpose Small Signals

YES

BCR158F-E6327 by Infineon Technologies

BCR158F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.1 A

70

1

PNP

.25 W

BIP General Purpose Small Signals

YES

SILICON

BCR179F-E6327 by Infineon Technologies

BCR179F-E6327

Infineon Technologies

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.25 W

BIP General Purpose Small Signals

YES

SILICON

RN2702(TE85L,F) by Toshiba

RN2702(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

50

2

PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN2107ACT(TPL3) by Toshiba

RN2107ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Transistor Element Material: SILICON;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2108ACT(TPL3) by Toshiba

RN2108ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 80;

.08 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2506(TE85L,F) by Toshiba

RN2506(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; No. of Elements: 2;

.1 A

80

2

260

PNP

.3 W

BIP General Purpose Small Signal

YES

30

SILICON

RN2114(TE85L,F) by Toshiba

RN2114(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 50;

.1 A

50

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2117(TE85L,F) by Toshiba

RN2117(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.1 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2304(TE85L,F) by Toshiba

RN2304(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 80;

.1 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2307(TE85L,F) by Toshiba

RN2307(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;

.1 A

80

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2309(TE85L,F) by Toshiba

RN2309(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 70;

.1 A

70

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2313(TE85L,F) by Toshiba

RN2313(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2310(TE85L,F) by Toshiba

RN2310(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2311(TE85L,F) by Toshiba

RN2311(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 120; Transistor Element Material: SILICON;

.1 A

120

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2317(TE85L,F) by Toshiba

RN2317(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Transistor Element Material: SILICON;

.1 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2511(TE85L,F) by Toshiba

RN2511(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;

.1 A

120

2

PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN2704JE(TE85L,F) by Toshiba

RN2704JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2705JE(TE85L,F) by Toshiba

RN2705JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2706JE(TE85L,F) by Toshiba

RN2706JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2708JE(TE85L,F) by Toshiba

RN2708JE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 2;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2607(TE85L,F) by Toshiba

RN2607(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

80

2

PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN2608(TE85L,F) by Toshiba

RN2608(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 80;

.1 A

80

2

PNP

.3 W

BIP General Purpose Small Signal

YES

SILICON

RN2711(TE85L,F) by Toshiba

RN2711(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

PNP

.2 W

BIP General Purpose Small Signal

YES

SILICON

RN2911FE(TE85L,F) by Toshiba

RN2911FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

120

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2962FE(TE85L,F) by Toshiba

RN2962FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 50; Transistor Element Material: SILICON;

.1 A

50

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2971FE(TE85L,F) by Toshiba

RN2971FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

120

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2967FE(TE85L,F) by Toshiba

RN2967FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 2;

.1 A

80

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2969FE(TE85L,F) by Toshiba

RN2969FE(TE85L,F)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2; Transistor Element Material: SILICON;

.1 A

70

2

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2101ACT(TPL3) by Toshiba

RN2101ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 30; Transistor Element Material: SILICON;

.08 A

30

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON

RN2102ACT(TPL3) by Toshiba

RN2102ACT(TPL3)

Toshiba

PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 50;

.08 A

50

1

PNP

.1 W

BIP General Purpose Small Signal

YES

SILICON