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420 MHz Small Signal Bipolar Junction Transistors (BJT) 3

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2SA2127-AE by Onsemi

2SA2127-AE

Onsemi

2SA2127-AE by Onsemi is a PNP BJT transistor with max. power dissipation of 1W, max. collector-emitter voltage of 50V, and max. collector current of 2A. Ideal for switching applications due to its single configuration and cylindrical package style, it has a min DC current gain of 40 and operates up to 150°C.

2 A

50 V

SINGLE

40

TO-226AE

O-PBCY-T3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

1 W

Other Transistors

NO

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

THROUGH-HOLE

BOTTOM

SWITCHING

SILICON

420 MHz

PMEM1505NG,115 by NXP Semiconductors

PMEM1505NG,115

NXP Semiconductors

NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .5 A;

.5 A

15 V

SINGLE WITH BUILT-IN DIODE

90

R-PDSO-G5

e3

1

5

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.8 W

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

420 MHz

PBSS2515YPN-QX by Nexperia

PBSS2515YPN-QX

Nexperia

NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 420 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;

.5 A

6 pF

15 V

SEPARATE, 2 ELEMENTS

200

R-PDSO-G6

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN AND PNP

.3 W

AEC-Q101; IEC-60134

YES

GULL WING

DUAL

SWITCHING

SILICON

420 MHz

.25 V