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.45 W Small Signal Bipolar Junction Transistors (BJT) 8

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
DN0150ALP4-7B by Diodes Incorporated

DN0150ALP4-7B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

DN0150BLP4-7B by Diodes Incorporated

DN0150BLP4-7B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

DP0150ALP4-7B by Diodes Incorporated

DP0150ALP4-7B

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

80 MHz

DP0150BLP4-7B by Diodes Incorporated

DP0150BLP4-7B

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

80 MHz

SS9015ABU by Fairchild Semiconductor

SS9015ABU

Fairchild Semiconductor

SS9015ABU by Fairchild Semiconductor is a PNP BJT transistor with 3 terminals. It has a max power dissipation of 0.45W, hFE of 60, and fT of 190MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.

LOW NOISE

.1 A

45 V

SINGLE

60

TO-92

O-PBCY-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

PNP

.45 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

190 MHz

DP0150ALP4-7 by Diodes Incorporated

DP0150ALP4-7

Diodes Incorporated

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

PNP

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

80 MHz

DN0150ALP4-7 by Diodes Incorporated

DN0150ALP4-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

120

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz

DN0150BLP4-7 by Diodes Incorporated

DN0150BLP4-7

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;

HIGH RELIABILITY

COLLECTOR

.1 A

50 V

SINGLE

200

R-PBCC-N3

e4

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

NPN

.45 W

Not Qualified

Other Transistors

YES

NICKEL PALLADIUM GOLD

NO LEAD

BOTTOM

30

SILICON

60 MHz