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.33 W Small Signal Bipolar Junction Transistors (BJT) 5

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ADTA114YUAQ-13 by Diodes Incorporated

ADTA114YUAQ-13

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTA114YUAQ-7 by Diodes Incorporated

ADTA114YUAQ-7

Diodes Incorporated

PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 4.7

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

68

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

PNP

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143XUAQ-13 by Diodes Incorporated

ADTC143XUAQ-13

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC124EUAQ-7 by Diodes Incorporated

ADTC124EUAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISITOR RATIO IS 1

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

56

R-PDSO-G3

e3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

MATTE TIN

GULL WING

DUAL

SILICON

250 MHz

ADTC143XUAQ-7 by Diodes Incorporated

ADTC143XUAQ-7

Diodes Incorporated

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .1 A;

BUILT IN BIAS RESISTOR RATIO IS 2.13

.1 A

50 V

SINGLE WITH BUILT-IN RESISTOR

30

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.33 W

AEC-Q101; IATF 16949, MIL-STD-202

YES

GULL WING

DUAL

SILICON

250 MHz