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5.7 W RF Small Signal Field Effect Transistors (FET) 1

RF Small Signal Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
BLF202,115 by NXP Semiconductors

BLF202,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 5.7 W; No. of Terminals: 8; Terminal Form: GULL WING;

SINGLE

40 V

1 A

1 A

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

R-CDSO-G8

1

8

ENHANCEMENT MODE

200 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

5.7 W

10 dB

Not Qualified

FET General Purpose Power

YES

GULL WING

DUAL

AMPLIFIER

SILICON