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National Semiconductor RF Small Signal Bipolar Junction Transistors (BJT) 1

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
PN5179/D26Z by National Semiconductor

PN5179/D26Z

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE;

1 pF

12 V

SINGLE

25

VERY HIGH FREQUENCY BAND

TO-92

O-PBCY-T3

1

3

PLASTIC/EPOXY

ROUND

CYLINDRICAL

NPN

15 dB

Not Qualified

NO

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

900 MHz

.4 V