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7000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 9

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFG135,115 by NXP Semiconductors

BFG135,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .15 A;

BUILT-IN EMITTER BALLASTING RESISTORS

COLLECTOR

.15 A

15 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1 W

1 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

7000 MHz

BFG591,115 by NXP Semiconductors

BFG591,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): .2 A;

LOW NOISE, HIGH RELIABILITY

COLLECTOR

.2 A

15 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

1.2 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

7000 MHz

BFQ591,115 by NXP Semiconductors

BFQ591,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .2 A;

HIGH RELIABILITY, LOW NOISE

COLLECTOR

.2 A

15 V

SINGLE

60

ULTRA HIGH FREQUENCY BAND

TO-243

R-PSSO-F3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

2 W

Not Qualified

BIP RF Small Signal

YES

TIN

FLAT

SINGLE

30

AMPLIFIER

SILICON

7000 MHz

2SC5084-O(TE85L,F) by Toshiba

2SC5084-O(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .08 A;

LOW NOISE

.08 A

1.15 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Other Transistors

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC3356-T1B-R25-A by Renesas Electronics

2SC3356-T1B-R25-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: AMPLIFIER;

LOW NOISE

.1 A

1 pF

12 V

SINGLE

L BAND

R-PDSO-G3

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC5065-O(TE85L,F) by Toshiba

2SC5065-O(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC5065-Y(TE85L,F) by Toshiba

2SC5065-Y(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .03 A;

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

120

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

2SC5066-O,LF by Toshiba

2SC5066-O,LF

Toshiba

Toshiba's 2SC5066-O,LF is an NPN RF BJT transistor with a max fT of 7000 MHz. It has a max IC of 0.03 A and hFE of 80, suitable for amplifier applications in the UHF band. The package is a small outline with gull wing terminals, making it ideal for surface mount designs.

LOW NOISE

.03 A

.9 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.1 W

.1 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz

NE85633-T1B-R25-A by Renesas Electronics

NE85633-T1B-R25-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;

.1 A

1 pF

12 V

SINGLE

50

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.2 W

.2 W

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz