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14000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 5

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFR340FH6327XTSA1 by Infineon Technologies

BFR340FH6327XTSA1

Infineon Technologies

The BFR340FH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor with a maximum collector-emitter voltage of 6V. It has a rectangular package shape and is suitable for amplifier applications in the S band. The transistor has a maximum collector current of 0.02A and a nominal transition frequency of 14,000MHz.

LOW NOISE

.02 A

.4 pF

6 V

SINGLE

S BAND

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

14000 MHz

BFG325W/XR,115 by NXP Semiconductors

BFG325W/XR,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

LOW NOISE

COLLECTOR

.035 A

.4 pF

6 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.21 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

14000 MHz

BFG325/XR,215 by NXP Semiconductors

BFG325/XR,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .21 W; Maximum Collector Current (IC): .035 A;

LOW NOISE

COLLECTOR

.035 A

.4 pF

6 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.21 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

14000 MHz

BFG310W/XR,115 by NXP Semiconductors

BFG310W/XR,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .06 W; Maximum Collector Current (IC): .01 A;

LOW NOISE

COLLECTOR

.01 A

.3 pF

6 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.06 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

14000 MHz

BFG310/XR,215 by NXP Semiconductors

BFG310/XR,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 14000 MHz; Maximum Power Dissipation (Abs): .06 W; Maximum Collector Current (IC): .01 A;

LOW NOISE

COLLECTOR

.01 A

.3 pF

6 V

SINGLE

60

L BAND

R-PDSO-G4

e3

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.06 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

SWITCHING

SILICON

14000 MHz