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12000 MHz RF Small Signal Bipolar Junction Transistors (BJT) 5

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
NE68530-T1-A by Renesas Electronics

NE68530-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

LOW NOISE

.03 A

.7 pF

6 V

SINGLE

75

S BAND

R-PDSO-G3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

Not Qualified

Other Transistors

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

12000 MHz

NE68539-T1-A by Renesas Electronics

NE68539-T1-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;

LOW NOISE

.03 A

.5 pF

6 V

SINGLE

S BAND

R-PDSO-G4

1

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

Not Qualified

YES

GULL WING

DUAL

AMPLIFIER

SILICON

12000 MHz

2SC5455-A by Renesas Electronics

2SC5455-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE;

LOW NOISE

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

12000 MHz

2SC5455-T1-A by Renesas Electronics

2SC5455-T1-A

Renesas Electronics

2SC5455-T1-A by Renesas Electronics is an NPN RF BJT transistor with a max fT of 12 GHz. It has a collector-emitter voltage of 6V and a collector current of 0.1A, making it suitable for amplifier applications in the L band. This surface-mount transistor comes in a small outline package with Gull Wing terminals.

LOW NOISE

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

YES

GULL WING

DUAL

10

AMPLIFIER

SILICON

12000 MHz

2SC5753-T2-A by Renesas Electronics

2SC5753-T2-A

Renesas Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .1 A; Additional Features: HIGH RELIABILITY;

HIGH RELIABILITY

.1 A

.7 pF

6 V

SINGLE

L BAND

R-PDSO-F4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

FLAT

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

12000 MHz