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.15 W RF Small Signal Bipolar Junction Transistors (BJT) 8

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
2SC4774T106S by ROHM

2SC4774T106S

ROHM

ROHM 2SC4774T106S is an NPN BJT transistor for switching applications in the UHF band. Features include VCEsat of 0.3V, hFE of 270, and fT of 800MHz. With a max operating temp of 150°C, it has a small outline package with gull wing terminals for surface mount assembly.

.05 A

1.7 pF

6 V

SINGLE

270

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

e1

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

Tin/Silver/Copper (Sn/Ag/Cu)

GULL WING

DUAL

10

SWITCHING

SILICON

800 MHz

.3 V

EMX5T2R by ROHM

EMX5T2R

ROHM

ROHM's EMX5T2R is a NPN BJT with 2 elements, ideal for amplifier applications. It features a max collector-emitter voltage of 11V, fT of 3200MHz, and hFE min of 27. With a small outline package style and surface mount capability, it offers high performance in compact designs.

.05 A

1.55 pF

11 V

SEPARATE, 2 ELEMENTS

27

R-PDSO-F6

e2

1

2

6

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN COPPER

FLAT

DUAL

10

AMPLIFIER

SILICON

3200 MHz

BFG505,215 by NXP Semiconductors

BFG505,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

HIGH RELIABILITY

COLLECTOR

.018 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFG505/X,215 by NXP Semiconductors

BFG505/X,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

HIGH RELIABILITY

COLLECTOR

.018 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

9000 MHz

BFR505,215 by NXP Semiconductors

BFR505,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR505T,115 by NXP Semiconductors

BFR505T,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFS505,115 by NXP Semiconductors

BFS505,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

2SC5084-O(TE85L,F) by Toshiba

2SC5084-O(TE85L,F)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .08 A;

LOW NOISE

.08 A

1.15 pF

12 V

SINGLE

80

ULTRA HIGH FREQUENCY BAND

R-PDSO-G3

1

3

125 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.15 W

Other Transistors

YES

GULL WING

DUAL

AMPLIFIER

SILICON

7000 MHz