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.02 A RF Small Signal Bipolar Junction Transistors (BJT) 3

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFP720F-E6327 by Infineon Technologies

BFP720F-E6327

Infineon Technologies

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .08 W; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON GERMANIUM; No. of Elements: 1;

.02 A

160

1

1

260

NPN

.08 W

BIP RF Small Signal

YES

SILICON GERMANIUM

BFR340FH6327XTSA1 by Infineon Technologies

BFR340FH6327XTSA1

Infineon Technologies

The BFR340FH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor with a maximum collector-emitter voltage of 6V. It has a rectangular package shape and is suitable for amplifier applications in the S band. The transistor has a maximum collector current of 0.02A and a nominal transition frequency of 14,000MHz.

LOW NOISE

.02 A

.4 pF

6 V

SINGLE

S BAND

R-PDSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

DUAL

AMPLIFIER

SILICON

14000 MHz

BFR720L3RHE6327XTSA1 by Infineon Technologies

BFR720L3RHE6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .02 A; Package Shape: RECTANGULAR;

LOW NOISE

EMITTER

.02 A

4 V

SINGLE

X BAND

R-XBCC-N3

1

3

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NPN

YES

NO LEAD

BOTTOM

AMPLIFIER

SILICON GERMANIUM

45000 MHz