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.018 A RF Small Signal Bipolar Junction Transistors (BJT) 6

RF Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum VCEsat
BFG505,215 by NXP Semiconductors

BFG505,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

HIGH RELIABILITY

COLLECTOR

.018 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFG505/X,215 by NXP Semiconductors

BFG505/X,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

HIGH RELIABILITY

COLLECTOR

.018 A

SINGLE

60

L BAND

R-PDSO-G4

e3

1

1

4

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

CECC

Other Transistors

YES

MATTE TIN

GULL WING

DUAL

SWITCHING

SILICON

9000 MHz

BFM505,115 by NXP Semiconductors

BFM505,115

NXP Semiconductors

NXP Semiconductors' BFM505,115 is a NPN RF BJT transistor with 2 elements for switching applications. It operates in L Band with fT of 9000 MHz and can handle max collector-emitter voltage of 8V. This small outline package has Gull Wing terminals and can withstand up to 175°C operating temperature.

LOW NOISE, HIGH RELIABILITY

.018 A

8 V

SEPARATE, 2 ELEMENTS

L BAND

R-PDSO-G6

e3

1

2

6

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

Not Qualified

YES

TIN

GULL WING

DUAL

30

SWITCHING

SILICON

9000 MHz

BFR505,215 by NXP Semiconductors

BFR505,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

TO-236AB

R-PDSO-G3

e3

1

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

CECC

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFR505T,115 by NXP Semiconductors

BFR505T,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz

BFS505,115 by NXP Semiconductors

BFS505,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .018 A;

LOW NOISE, HIGH RELIABILITY

.018 A

SINGLE

60

L BAND

R-PDSO-G3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

.15 W

.15 W

Not Qualified

Other Transistors

YES

TIN

GULL WING

DUAL

30

AMPLIFIER

SILICON

9000 MHz