Loading...

437 W RF Power Field Effect Transistors (FET) 1

RF Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Minimum Power Gain (Gp) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material
SD3931-10 by STMicroelectronics

SD3931-10

STMicroelectronics

SD3931-10 by STMicroelectronics is an N-channel RF power FET designed for high-frequency applications. It features a max drain current of 10 A, a breakdown voltage of 250 V, and operates at temperatures up to 200 °C. Ideal for enhancing performance in demanding RF circuits.

SOURCE

SINGLE

250 V

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

VERY HIGH FREQUENCY BAND

O-PRFM-F4

1

4

ENHANCEMENT MODE

200 Cel

PLASTIC/EPOXY

ROUND

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

437 W

Not Qualified

FET General Purpose Power

YES

FLAT

RADIAL

NOT SPECIFIED

SILICON